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Institution Date Title Author
國立中山大學 1999 Effect of treading dislocations on electron transport in In0.24Ga0.76N/GaN multiple Quantum wells Ikai Lo;K.Y. Hsieh;S.L. Hwang;Li-Wei Tu;W.C. Mitchel;A.W. Saxler
國立中山大學 1999 Effect of Threading Dislocations on Electron Transport in In0.24Ga0.76N/GaN Multiple Quantum Wells I. Lo;K.Y. Hsieh;S.L. Hwang;L.W. Tu;W.C. Mitchel;A.W. Saxler
國立中山大學 1999 A transport study of threading dislocations in InGaN/GaN multiple quantum wells Ikai Lo;k.Y. Hsieh;L.W. Tu;W.C. Mitchel;A.W. Saxler
國立中山大學 1999 Effect of threading dislocations on electron transport in InGaN/GaN multiple quantum wells Ikai Lo;k.Y. Hsieh;S.L. Hwang;L.W. Tu;W.C. Mitchel;A.W. Saxler

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