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Showing items 1-6 of 6 (1 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:55:48Z |
Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation
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Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:26Z |
Effective surface treatment for GaN metal-insulator-semiconductor high-electron-mobility transistors using HF plus N-2 plasma prior to SiN passivation
|
Liu, Shih-Chien; Trinh, Hai-Dang; Dai, Gu-Ming; Huang, Chung-Kai; Dee, Chang-Fu; Majlis, Burhanuddin Yeop; Biswas, Dhrubes; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:36:49Z |
Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors
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Ghosh, Saptarsi; Dinara, Syed Mukulika; Mukhopadhyay, Partha; Jana, Sanjay K.; Bag, Ankush; Chakraborty, Apurba; Chang, Edward Yi; Kabi, Sanjib; Biswas, Dhrubes |
| 國立交通大學 |
2014-12-08T15:35:53Z |
Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE
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Mukhopadhyay, Partha; Bag, Ankush; Gomes, Umesh; Banerjee, Utsav; Ghosh, Saptarsi; Kabi, Sanjib; Chang, Edward Y. I.; Dabiran, Amir; Chow, Peter; Biswas, Dhrubes |
| 國立交通大學 |
2014-12-08T15:25:10Z |
A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)
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Kuo, Chien-I; Hsu, Heng-Tung; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Chen, Yu-Lin; Biswas, Dhrubes |
| 國立交通大學 |
2014-12-08T15:15:48Z |
Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrate
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Hsieh, Y. C.; Chang, E. Y.; Luo, G. L.; Chen, S. H.; Biswas, Dhrubes; Wang, S. Y.; Chang, C. Y. |
Showing items 1-6 of 6 (1 Page(s) Totally)
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