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"borland john"的相關文件
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| 國立交通大學 |
2020-10-05T02:02:20Z |
Boosting Ge-epi N-well Mobility with Sn Implantation and P-well Mobility with Cluster-C Implantation
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Borland, John; Chaung, Shang-Shiun; Tseng, Tseung-Yuen; Lee, Yao-Jen; Joshi, Abhijeet; Basol, Bulent; Kuroi, Takashi; Goodman, Gary; Khapochkima, Nadya; Buyuklimanli, Temel |
| 國立交通大學 |
2020-10-05T02:00:32Z |
Boosting Ge-epi P-well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing
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Borland, John; Chaung, Shang-Shuin; Tseng, Tseung-Yuen; Joshi, Abhij Eet; Basol, Bulent; Lee, Yao-Jen; Kuroi, Takashi; Tabata, Toshiyuki; Huet, Karim; Goodman, Gary; Khapochkina, Nadya; Buyuklimanli, Temel |
| 國立交通大學 |
2020-02-02T23:55:35Z |
Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering
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Borland, John; Chaung, Shang-Shuin; Tseng, Tseung-Yuen; Joshi, Abhijeet; Basol, Bulent; Lee, Yao-Jen; Kuroi, Takashi; Goodman, Gary; Khapochkina, Nadya; Buyuklimanli, Temel |
| 國立交通大學 |
2018-08-21T05:57:09Z |
Solid Solubility Limited Dopant Activation of Group III Dopants (B, Ga & In) in Ge Targeting sub-7nm Node Low p plus Contact Resistance
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Borland, John; Lee, Yao-Jen; Chuang, Shang-Shiun; Tseng, Tseung-Yuen; Liu, Chee-Wee; Huet, Karim; Goodman, Gary; Marino, John |
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