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Taiwan Academic Institutional Repository >
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"brammertz g"
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| 國立交通大學 |
2014-12-08T15:48:27Z |
H(2)S molecular beam passivation of Ge(001)
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; El-Kazzi, M.; Bellenger, F.; Brammertz, G.; Hong, M.; Kwo, J.; Meuris, M.; Dekoster, J.; Heyns, M. M.; Caymax, M. |
| 國立交通大學 |
2014-12-08T15:33:42Z |
Electrical Characterization of Al(2)O(3)/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments
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Trinh, H. D.; Brammertz, G.; Chang, E. Y.; Kuo, C. I.; Lu, C. Y.; Lin, Y. C.; Nguyen, H. Q.; Wong, Y. Y.; Tran, B. T.; Kakushima, K.; Iwai, H. |
| 國立交通大學 |
2014-12-08T15:26:43Z |
Defect density reduction of the Al(2)O(3)/GaAs(001) interface by using H(2)S molecular beam passivation
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Merckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M. |
| 國立交通大學 |
2014-12-08T15:21:44Z |
Experimental and modeling on atomic layer deposition Al2O3/n-InAs metal-oxide-semiconductor capacitors with various surface treatments
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Trinh, H. D.; Chang, E. Y.; Brammertz, G.; Lu, C. Y.; Nguyen, H. Q.; Tran, B. T. |
| 國立臺灣科技大學 |
2009 |
Optical characterization of thin epitaxial GaAs films on Ge substrates
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Wu J.D.; Huang Y.S.; Brammertz G.; Tiong K.K. |
Showing items 11-15 of 15 (1 Page(s) Totally)
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