臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T09:24:39Z	Electron transport in a GaPSb film	S. T. Lo; H. E. Lin; S.-W. Wang; H. D. Lin; Y. C. Chin; H. H. Lin; J. C. Lin; C. T. Liang; S. T. Lo; H. E. Lin; S.-W. Wang; H. D. Lin; Y. C. Chin; H. H. Lin; J. C. Lin; C. T. Liang; CHI-TE LIANG; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:00Z	Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructure	Y. H. Chang; C. T. Liang; N. Aoki; Y. Ochiai; C. F. Huang; L. H. Lin; K. A. Cheng; H. H. Cheng; H. H. Lin; S. D. Lin; K. Y. Chen,; HAO-HSIUNG LINet al.
臺大學術典藏	2018-09-10T07:07:59Z	Probing Landau quantization with the presence of insulator-quantum Hall transitions in two-dimensional GaAs electron systems	Y. H. Chang; C. T. Liang; N. Aoki; Y. Ochiai; C. F. Huang; L. H. Lin; K. A. Cheng; H. H. Cheng; H. H. Lin; J. Y. Wu; S. D. Lin; K. Y. Chen,; CHI-TE LIANG; HAO-HSIUNG LINet al.
臺大學術典藏	2018-09-10T03:50:02Z	Insulator-quantum Hall conductor transitions at low magnetic field	C. F. Huang,; Y. H. Chang,; C. H. Lee,; H. D. Yeh,; C.-T. Liang,; Y. F. Chen,; H. H. Lin,; H. H. Cheng,; G. J. Hwang,; HAO-HSIUNG LIN
國立中山大學	2007	Huge positive magnetoresistance in an InN film	C.T. Liang;Zhi-Hao Sun;Ching-Lien Hsiao;M.Z. Hsu;L.W. Tu;Jyun-Ying Lin;Jing-Han Chen;Y.F. Chen;Ting-Wu Chien
國立東華大學	2006	Temperature-dependent optical properties of In0:34Ga0:66As1-xNx/GaAs single quantum well with high nitrogen content for 1:55 m application grown by molecular beam epitaxy	祁錦雲; Jim-Yong Chi; Fang-I. Lai ; S.Y. Kuo ; J.S. Wang ; R.S. Hsiao ; H.C. Kuo ; J. Chi; S.C. Wang; H.S. Wang; C.T. Liang; Y.F. Chen
國立臺灣海洋大學	2005-02-15	Electron transport in In-rich In xGa1- xN films	Shih-Kai Lin;Kun-Ta Wu;Chao-Ping Huang;C.-T. Liang;Y. H. Chang;Y. F. Chen;P. H. Chang;N. C. Chen;C. A. Chang;H. C. Peng;C. F. Shih;K. S. Liu;T. Y. Lin
國立東華大學	2005	Temperature-dependent optical properties of In0.34Ga0.66As1-xNx / GaAs single quantum well with high N content grown by molecular beam epitaxy	祁錦雲; Jim-Yong Chi; Fang-I Lai; S. Y. Kuo;J.S. Wang;H.C. Kuo; J. Chi; S. C. Wang; H. S. Wang; C. T. Liang; Y. F. Chen
國立中山大學	2005	Zero-field spin-splitting in modulation doped AlxGa1-xN/GaN two-dimensional electron system	K.S. Cho;Tsai-Yu Huang;Hong-Syuan Wang;Ming-Gu Lin;Tse-Ming Chen;C.T. Liang;Y.F. Chen;Ikai Lo
國立中山大學	2004	Exchange-enhanced g-factors in an Al0.25Ga0.75N/GaN two-dimensional electron system	K.S. Cho;Tsai-Yu Huang;Chao-Ping Huang;Yi-Hsing Chiu;C.T. Liang;Y.F. Chen;Ikai Lo

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