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Showing items 96-105 of 182  (19 Page(s) Totally)
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Institution Date Title Author
國立中山大學 2006 High performance metal-induced lateral-crystallization polysilcion thin film transistor with multiple nanowire channel and multiple gates Y.C. Wu;T.C. Chang;P.T. Liu;C.W. Chou;Y.C. Wu;C.H. Tu;C.Y. Chang
國立中山大學 2006 The Improved Memory Window for Ge Nanocrystals Embedded in SiON Layer C.H. Tu;T.C. Chang;P.T. Liu;H.C. Liu;Simon M. Sze;C.Y. Chang
國立中山大學 2006 Application of Data Envelopment Analysis to Evaluate Efficiency of Nursing Units: A Sample of Medical Center W.Y. Au;S.C. Yeh;C.Y. Chang
國立政治大學 2005-07 A User Modeling Framework for Exploring Creative Problem-Solving Ability H.C. Wang;李蔡彥;C.Y. Chang
國立中山大學 2005-02 Direct Implementation of Space-Time MC-CDMA Receiver with Adaptive Linearly Constrained Constant Modulus Algorithm S.J. Chern;C.Y. Chang
國立中山大學 2005 Direct Implementation of Space-Time MC-CDMA Receiver with Adaptive Linearly Constrained Constant Modulus Algorithm S.J. Chern;C.Y. Chang
國立中山大學 2005 Improvement of reliability for polycrystalline thin film transistor using self-aligned fluorinated silica glass spacers C.H. Tu;T.C. Chang;P.T. Liu;H.W. Zan;Y.H. Tai;Y.C. Wu;C.Y. Chang
國立中山大學 2005 Effects of channel width on electrical characteristics of polysilicon TFTs with nanowire channel Y.C. Wu;T.C. Chang;P.T. Liu;C.S. Chen;C.H. Tu;H.W. Zan;Y.H. Tai;C.Y. Chang
國立中山大學 2005 Reduction of leakage current in metal-induced lateral crystallization polysilicon TFTs with dual-gate and multiple nanowire channel Y.C. Wu;T.C. Chang;P.T. Liu;C.W. Chou;Y.C. Wu;C.H. Tu;C.Y. Chang
國立中山大學 2005 Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-flim transistors by pattern-dependent metal-induced lateral crystallization Y.C. Wu;T.C. Chang;C.W. Chen;Y.C. Wu;P.T. Liu;C.H. Tu;C.Y. Chang

Showing items 96-105 of 182  (19 Page(s) Totally)
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