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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 臺大學術典藏 |
2020-01-17T07:47:02Z |
The correlation of surface defects and reverse breakdown of 4H-SiC Schottky barrier diodes
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Lee, K.-Y.; Capano, M.A.; KUNG-YEN LEE |
| 臺大學術典藏 |
2018-09-10T06:17:58Z |
The impact of surface morphology on C- and Si-face 4H-SiC Schottky barrier diodes
|
Lee, K.-Y.; Huang, C.-F.; Chen, W.; Capano, M.A.; KUNG-YEN LEE |
| 臺大學術典藏 |
2018-09-10T06:17:58Z |
The correlation of surface defects and reverse breakdown of 4H-SiC Schottky barrier diodes
|
Lee, K.-Y.; Capano, M.A.; KUNG-YEN LEE |
| 臺大學術典藏 |
2018-09-10T05:49:32Z |
Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers
|
Chen, W.; Lee, K.-y.; Capano, M.A.; KUNG-YEN LEE |
Showing items 1-4 of 4 (1 Page(s) Totally)
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