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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
國立交通大學 2014-12-08T15:03:56Z CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION WU, JW; CHANG, CY; LIN, KC; CHAN, SH; CHEN, HD; CHEN, PA; CHANG, EY; KUO, MS
國立交通大學 2014-12-08T15:03:49Z INFLUENCE OF METALORGANIC SOURCES ON THE COMPOSITION UNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP CHAN, SH; CHANG, CY; SZE, SM
國立交通大學 2014-12-08T15:03:47Z MAGNESIUM DOPING OF INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION WU, CC; CHANG, CY; CHEN, PA; CHEN, HD; LIN, KC; CHAN, SH
國立交通大學 2014-12-08T15:03:44Z SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING ETHYLDIMETHYLINDIUM AS IN-SOURCE CHAN, SH; SZE, SM; CHANG, CY; LEE, WI
國立交通大學 2014-12-08T15:03:41Z INVESTIGATIONS ON THE COMPOSITIONAL NONUNIFORMITY OF SELECTIVELY GROWN GAXIN1-XP BY LP-MOCVD USING EDMI, TMI, TEG, AND TMG AS GROUP-III SOURCES CHAN, SH; CHANG, CY; SZE, SM
國立交通大學 2014-12-08T15:03:40Z SELECTIVE EPITAXIAL-GROWTH OF GAINP BY LP-MOCVD USING ETHYLDIMETHYLINDIUM, TRIMETHYLINDIUM, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM AS GROUP-III SOURCES CHAN, SH; SZE, SM; CHANG, CY; LEE, WI
國立交通大學 2014-12-08T15:03:17Z BACK-GATING EFFECTS ON THE GA0.1IN0.8P/INP/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR LIN, KC; CHANG, CY; WU, CC; CHEN, HD; CHEN, PA; CHAN, SH; WU, JW; CHANG, EY
國立交通大學 2014-12-08T15:03:12Z SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION WANG, CJ; WU, JW; CHAN, SH; CHANG, CY; SZE, SM; FENG, MS
國立交通大學 2014-12-08T15:03:03Z Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor deposition Wang, CJ; Feng, MS; Chan, SH; Wu, JW; Chang, CY; Sze, SM
國立交通大學 2014-12-08T15:02:45Z High-performance An/Ti/Ge/Pd ohmic contacts on n-Type In0.5Ga0.5P Chai, CY; Wu, JW; Guo, JD; Huang, JA; Lai, YL; Chan, SH; Chang, CY; Chan, YJ; Cheng, HC

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