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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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2019臺灣學術機構典藏
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Showing items 21-30 of 83  (9 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T08:46:15Z Analysis of Turn-off Transient Behavior of the 40nm PD SOI NMOS Device with the Floating Body Effect C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏 2018-09-10T08:18:33Z Digital compensation design method and digital compensation for a switching mode power supply W.-H. Chang;D. Chen; W.-H. Chang; D. Chen; DAN CHEN
臺大學術典藏 2018-09-10T08:18:33Z Digital compensation design method and digital compensation for a switching mode power supply W.-H. Chang;D. Chen; W.-H. Chang; D. Chen; DAN CHEN
臺大學術典藏 2018-09-10T08:18:06Z Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏 2018-09-10T08:18:06Z Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏 2018-09-10T08:18:06Z Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach J. S. Su;J. B. Kuo;D. Chen;C. S. Yeh; J. S. Su; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏 2018-09-10T08:18:06Z Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach J. S. Su;J. B. Kuo;D. Chen;C. S. Yeh; J. S. Su; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏 2018-09-10T08:18:06Z Modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect C. H. Chen;J. B. Kuo;D. Chen;C. S. Yeh; C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏 2018-09-10T08:18:06Z Modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect C. H. Chen;J. B. Kuo;D. Chen;C. S. Yeh; C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏 2018-09-10T08:18:05Z Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device H. J. Hung;J. B. kuo;D. Chen;C. T. Tsai;C. S. Yeh; H. J. Hung; J. B. kuo; D. Chen; C. T. Tsai; C. S. Yeh; JAMES-B KUO

Showing items 21-30 of 83  (9 Page(s) Totally)
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