English  |  正體中文  |  简体中文  |  0  
???header.visitor??? :  52382146    ???header.onlineuser??? :  937
???header.sponsordeclaration???
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
???ui.leftmenu.abouttair???

???ui.leftmenu.bartitle???

???index.news???

???ui.leftmenu.copyrighttitle???

???ui.leftmenu.link???

"edward yi chang"???jsp.browse.items-by-author.description???

???jsp.browse.items-by-author.back???
???jsp.browse.items-by-author.order1??? ???jsp.browse.items-by-author.order2???

Showing items 76-85 of 122  (13 Page(s) Totally)
<< < 3 4 5 6 7 8 9 10 11 12 > >>
View [10|25|50] records per page

Institution Date Title Author
元智大學 2009-10 InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric 許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學 2009-10 InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric 許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學 2009-10 InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric 許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學 2009-10 InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric 許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學 2009-10 InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric 許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto
元智大學 2009-05 A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT 許恒通; Chien-I Kuo; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Yu-Lin Chen; Dhrubes Biswas
元智大學 2009-05 Linearity Characteristics of Field Plated AlGaN/GaN HEMTs for Microwave Applications 許恒通; Jui-Chien Huang; Chung-Yu Lu; Chia-Ta Chang; Edward Yi Chang
元智大學 2009-05 A 40-nm-Gate InAs/InGaAs Composite-Channel HEMT with 2200 mS/mm and 500-GHz fT 許恒通; Chien-I Kuo; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Yu-Lin Chen; Dhrubes Biswas
元智大學 2009-05 Linearity Characteristics of Field Plated AlGaN/GaN HEMTs for Microwave Applications 許恒通; Jui-Chien Huang; Chung-Yu Lu; Chia-Ta Chang; Edward Yi Chang
元智大學 2009-04 InAs-Channel HEMTs for Ultra-Low-Power LNA Applications 許恒通; Chia-Yuan Chang; Edward Yi Chang; Yasuyuki Miyamoto

Showing items 76-85 of 122  (13 Page(s) Totally)
<< < 3 4 5 6 7 8 9 10 11 12 > >>
View [10|25|50] records per page