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机构 日期 题名 作者
臺大學術典藏 2020-02-26T01:33:57Z Completely parylene-coated neuroprobe for chronic recording Fu-Shan JawLu, P.-L.;Fan, C.-L.;Yang, L.-J.;Lin, C.-W.;Yang, Y.-J.;Jaw, F.-S.; Lu, P.-L.; Fan, C.-L.; Yang, L.-J.; Lin, C.-W.; Yang, Y.-J.; Jaw, F.-S.; FU-SHAN JAW
臺大學術典藏 2020-02-26T01:33:54Z Novel fabrication of full parylene-isolated neuroprobes Lu, P.-L.; Fan, C.-L.; Yang, L.-J.; Lin, C.-W.; Jaw, F.-S.; FU-SHAN JAW
臺大學術典藏 2020-01-13T08:25:11Z Completely parylene-coated neuroprobe for chronic recording Lu, P.-L.; Fan, C.-L.; Yang, L.-J.; Lin, C.-W.; Yang, Y.-J.; Jaw, F.-S.; YAO-JOE YANG
臺大學術典藏 2019-07-15T04:24:31Z Completely parylene-coated neuroprobe for chronic recording Lu P.-L.;Fan C.-L.;Yang L.-J.;Lin C.-W.;Yang Y.-J.;Jaw F.-S.; Lu P.-L.; Fan C.-L.; Yang L.-J.; Lin C.-W.; Yang Y.-J.; Jaw F.-S.
國立成功大學 2019 A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs Tang, Y.-T.;Fan, C.-L.;Kao, Y.-C.;Modolo, N.;Su, C.-J.;Wu, T.-L.;Kao, Kao K.-H.;Wu, P.-J.;Hsaio, S.-W.;Useinov, A.;Su, P.;Wu, Wu W.-F.;Huang, G.-W.;Shieh, J.-M.;Yeh, W.-K.;Wang, Y.-H.
國立臺灣科技大學 2018 Performance enhancement of pentacene-based organic thin-film transistors using 6,13-pentacenequinone as a carrier injection interlayer Fan C.-L.; Lin W.-C.; Chen H.-W.
國立臺灣科技大學 2018 3T0.5C Compensating pixel circuit with all p-type LTPS-TFTs for AMOLED displays Fan C.-L.; Chen C.-Y.; Tseng F.-P.; Yang C.-C.; Chien K.-E.; Hsiao Y.-H.
國立臺灣科技大學 2018 Electrical performance and reliability improvement of amorphous-indium-gallium-zinc-oxide thin-film transistors with HfO2 gate dielectrics by CF4 plasma treatment Fan C.-L.; Tseng F.-P.; Tseng C.-Y.
國立交通大學 2017-04-21T06:56:05Z Nanoindentation Study of FePt Thin Films Deposited by Radio Frequency Magnetron Sputtering Chiu, Y. -J.; Shen, C. -Y.; Jian, S. -R.; Chang, H. -W.; Juang, J. -Y.; Liao, Y. -Y.; Fan, C. -L.
國立臺灣科技大學 2017 Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-linking process of the poly(4-vinylphenol) for the gate insulator of pentacene-based thin-film transistors Fan, C.-L.;Shang, M.-C.;Wang, S.-J.;Hsia, M.-Y.;Lee, W.-D.;Huang, B.-R.

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