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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
國立高雄師範大學 2012-09-20 規範化管理應用於國民中學班級經營之行動研究 李芳旻; Fang-Ming Lee
義守大學 2012-02 InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric Hsien-Cheng Lin;Fang-Ming Lee;Yu-Chun Cheng;Kuan-Wei Lee;Feri Adriyanto;Yeong-Her Wang
義守大學 2012-02 Investigation of TiO2 on AlGaAs prepared by liquid phase deposition and its application Kuan-Wei Lee;Jung-Sheng Huang;Yu-Lin Lu;Fang-Ming Lee;Hsien-Cheng Lin;Tsu-Yi Wu;Yeong-Her Wang
義守大學 2011-10 Characteristics of InGaP/InGaAs MOS-PHEMT with liquid phase-oxidized GaAs gate dielectric Hsien-Cheng Lin;Cheng-Chieh Wu;Fang-Ming Lee;Kuan-Wei Lee;Feri Adriyanto;Yeong-Her Wang
義守大學 2011-03 Liquid-phase-deposited SiO2 on AlGaAs and its application Kuan-Wei Lee;Jung-Sheng Huang;Yu-Lin Lu;Fang-Ming Lee;Hsien-Cheng Lin;Jian-Jun Huang;Yeong-Her Wang
義守大學 2011-03 Control of threshold voltage and improved subthreshold swing in enhancement-mode InGaP/InGaAs metal–oxide–semiconductor pseudomorphic high-electron-mobility transistor Kuan-Wei Lee;Hsien-Cheng Lin;Cheng-Chieh Wu;Fang-Ming Lee;Yeong-Her Wang
義守大學 2010-11 Control of threshold voltage and suppressed leakage current on AlGaAs/InGaAs PHEMT by liquid phase oxidation Kuan-Wei Lee;Hsien-Cheng Lin;Fang-Ming Lee;Wei-Sheng Chen;Yeong-Her Wang
義守大學 2010-06 Investigation of SiO2 on AlGaAs prepared by liquid phase deposition Kuan-Wei Lee;Jung-Sheng Huang;Yu-Lin Lu;Fang-Ming Lee;Hsien-Cheng Lin;Jian-Jun Huang;Yeong-Her Wang
義守大學 2010-05 Improved microwave and noise performance of InAlAs/InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate without gate recess Kuan-Wei Lee;Hsien-Cheng Lin;Fang-Ming Lee;Hou-Kuei Huang;Yeong-Her Wang
義守大學 2009 Selective Liquid Phase Oxidation of AlGaAs and Application to AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor Kuan-Wei Lee;Hsien-Chang Lin;Fang-Ming Lee;Yeong-Her Wang
義守大學 2008 高電子移動率電晶體之設計與分析 李芳名; Fang-Ming Lee
義守大學 2007-05 An Analytical Model and Measurement on the InAlAs/InGaAs High-Electron-Mobility Transistor with Oxidized InAlAs Gate Jung-Sheng Huang;Kuan-Wei Lee;Fang-Ming Lee;Yung-Sheng Huang;Yeong-Her Wang

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