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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:25:40Z |
The impact of uniaxial strain engineering on channel backscattering in nanoscale MOSFETs
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Lin, HN; Chen, HW; Ko, CH; Ge, CH; Lin, HC; Huang, TY; Lee, WC; Tang, DD |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Channel backscattering characteristics of strained PMOSFETs with embedded SiGe source/drain
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Lin, HN; Chen, HW; Ko, CH; Ge, CH; Lin, HC; Huang, TY; Lee, WC |
| 國立交通大學 |
2014-12-08T15:18:31Z |
Channel backscattering characteristics of uniaxially strained nanoscale CMOSFETs
|
Lin, HN; Chen, HW; Ko, CH; Ge, CH; Lin, HC; Huang, TY; Lee, WC |
Showing items 1-3 of 3 (1 Page(s) Totally)
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