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Showing items 11-23 of 23  (1 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:03:10Z EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY LEE, WI; HUANG, TC; GUO, JD; FENG, MS
國立交通大學 2014-12-08T15:03:09Z RAMAN-SCATTERING OF SE-DOPED GALLIUM NITRIDE FILMS KUO, HR; FENG, MS; GUO, JD; LEE, MC
國立交通大學 2014-12-08T15:03:08Z SE-DOPED GAN FILMS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GUO, JD; FENG, MS; PAN, FM
國立交通大學 2014-12-08T15:03:07Z STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY
國立交通大學 2014-12-08T15:02:54Z A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films Guo, JD; Lin, CI; Feng, MS; Pan, FM; Chi, GC; Lee, CT
國立交通大學 2014-12-08T15:02:45Z High-performance An/Ti/Ge/Pd ohmic contacts on n-Type In0.5Ga0.5P Chai, CY; Wu, JW; Guo, JD; Huang, JA; Lai, YL; Chan, SH; Chang, CY; Chan, YJ; Cheng, HC
國立交通大學 2014-12-08T15:02:34Z The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer Lin, CF; Chi, GC; Feng, MS; Guo, JD; Tsang, JS; Hong, JMH
國立交通大學 2014-12-08T15:02:34Z X-ray crystallographic study of GaN epitaxial films on Al2O3(0001) substrates with GaN buffer layers Lee, CH; Chi, GC; Lin, CF; Feng, MS; Guo, JD
國立交通大學 2014-12-08T15:02:31Z Reactive ion etching of GaN with BCl3/SF6 plasmas Feng, MS; Guo, JD; Lu, YM; Chang, EY
國立交通大學 2014-12-08T15:02:26Z Schottky contact and the thermal stability of Ni on n-type GaN Guo, JD; Pan, FM; Feng, MS; Guo, RJ; Chou, PF; Chang, CY
國立交通大學 2014-12-08T15:01:57Z Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructures Tsang, JS; Guo, JD; Chan, SH; Feng, MS; Chang, CY
國立交通大學 2014-12-08T15:01:46Z Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures Lin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC
國立交通大學 2014-12-08T15:01:28Z Growth and characterizations of GaN on SiC substrates with buffer layers Lin, CF; Cheng, HC; Chi, GC; Feng, MS; Guo, JD; Hong, JMH; Chen, CY

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