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Showing items 126-135 of 259  (26 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T06:34:43Z Comparative study of InAs quantum dots with different InGaAs capping methods C. H. Lin; W. W. Pai; F. Y. Chang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:34:43Z Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells H. P. Hsu,; P. Sitarek,; Y. S. Huang,; P. W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:02:01Z Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy T. C. Ma; Y. T. Lin; T. Y. Chen; H. H. Lin; T. C. Ma,; Y. T. Lin,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:02:00Z Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:02:00Z A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:02:00Z Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy D. L. Wang,; G. Tsai,; C. J. Wu,; C. E. Wu,; F. Tseng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:01:59Z MBE growth of quaternary InAsPSb alloy H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:01:59Z GaAsSbN grown on GaAs by gas source molecular beam epitaxy T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:01:59Z InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:01:59Z Mid-infrared InAsPSb/InAsSb quantum-well light emitter C. E. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN

Showing items 126-135 of 259  (26 Page(s) Totally)
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