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Showing items 151-160 of 259  (26 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T05:26:31Z Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasers C. L. Tsai,; C. T. Wan,; P. W. Liu,; G. H. Liao,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T05:26:30Z Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T05:26:30Z Performance evaluation of field-enhanced p-channel split-gate flash memory W. T. Chu,; H. H. Lin,; Y. H. Wang,; C. T. Hsieh,; Y. T. Lin,; C. S. Wang,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T05:26:30Z Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers C. R. Lu,; H. L. Liu,; J. R. Lee,; C. H. Wu,; H. H. Lin,; L. W. Sung,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T05:26:30Z Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:58:49Z Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers G. H. Liao,; C. L. Tsai,; P. W. Liu,; J. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:58:49Z GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes H. H. Lin,; P. W. Liu,; G. H. Liao,; C. L. Tsai,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:58:49Z Growth of InAs quantum dots with light emission at 1.3 m F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:58:48Z MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications G. Tsai,; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T04:58:48Z Study on high-power resonant-cavity light-emitting diodes L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN

Showing items 151-160 of 259  (26 Page(s) Totally)
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