| 臺大學術典藏 |
2018-09-10T06:01:59Z |
InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy
|
G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy
|
T. Y. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer
|
C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes
|
A. Krier,; M. Stone,; Q. D. Zhuang,; P. W. Liu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonics
|
Y. C. Wen; K. H. Lin; T. F. Kao; L. C. Chou; H. H. Lin; C. K. Sun; HAO-HSIUNG LIN; CHI-KUANG SUN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy
|
P. W. Liu,; G. Tsai,; H. H. Lin,; A. Krier,; Q. D. Zhuang,; M. Stone,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:32Z |
Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy
|
P. W. Liu,; G. Tsai,; H. H. Lin,; T. Krier,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:32Z |
Growth of InPSb on InAs inside a miscibility gap using gas source MBE
|
G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:32Z |
Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells
|
H. P. Hsu,; Y. S. Huang,; P.W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:32Z |
Numerical simulation on optical properties of GaN/AlN quantum dots
|
C. Y. Chen,; C. M. Lai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:32Z |
The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well
|
G. L. Wang,; Y. S. Huang,; H. H. Lin,; C. H. Chan,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
GaAsSb/GaAs quantum wells grown by MBE
|
H. H. Lin,; P. W. Liu,; C. L. Tsai,; G. H. Liao,; J. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
Study on the band line-up of GaAsSb/GaAs quantum wells
|
C. L. Tsai,; P. W. Liu,; G. H. Liao,; M. H. Lee,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
InAs/InGaAs/GaAs coupled quantum-dot laser
|
C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
InPSb bulk layers grown by gas source molecular beam epitaxy
|
G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasers
|
C. L. Tsai,; C. T. Wan,; P. W. Liu,; G. H. Liao,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:30Z |
Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents
|
H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:30Z |
Performance evaluation of field-enhanced p-channel split-gate flash memory
|
W. T. Chu,; H. H. Lin,; Y. H. Wang,; C. T. Hsieh,; Y. T. Lin,; C. S. Wang,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:30Z |
Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers
|
C. R. Lu,; H. L. Liu,; J. R. Lee,; C. H. Wu,; H. H. Lin,; L. W. Sung,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:30Z |
Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents
|
H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers
|
G. H. Liao,; C. L. Tsai,; P. W. Liu,; J. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes
|
H. H. Lin,; P. W. Liu,; G. H. Liao,; C. L. Tsai,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
Growth of InAs quantum dots with light emission at 1.3 m
|
F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications
|
G. Tsai,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
Study on high-power resonant-cavity light-emitting diodes
|
L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN |
