| 臺大學術典藏 |
2018-09-10T04:58:49Z |
Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers
|
G. H. Liao,; C. L. Tsai,; P. W. Liu,; J. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes
|
H. H. Lin,; P. W. Liu,; G. H. Liao,; C. L. Tsai,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
Growth of InAs quantum dots with light emission at 1.3 m
|
F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications
|
G. Tsai,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
Study on high-power resonant-cavity light-emitting diodes
|
L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection
|
C. H. Yu,; K. K. Kao,; M. H. Mao,; F. Y. Chang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm
|
F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:47Z |
Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy
|
T. S. Lay,; W. T. Kuo,; L. P. Chen,; Y. H. Lai,; H. Hung,; J. S. Wang,; J. Y. Chi,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:47Z |
Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells
|
T. T. Chen,; W. S. Su,; Y. F. Chen,; P. W. Liu,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T04:58:47Z |
Relaxation oscillations and damping factors of 1.3m In(Ga)As/GaAs quantum-dot lasers
|
M.-H. Mao,; T.-Y. Wu,; D.-C. Wu,; F.-Y. Chang,; H.-H. Lin,; MING-HUA MAO; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:46Z |
Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxy
|
C. M. Lai,; F. Y. Chang,; H. H. Lin,; G. J. Jan,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:46Z |
Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells
|
Y.-M. Chang,; H. H. Lin,; C. T. Chia,; Y. F. Chen,; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T04:58:46Z |
Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Subnikov de-Haas oscillation
|
D. R. Hang,; D. K. Shih,; C. F. Huang,; W. K. Hung,; Y. H. Chang,; Y. F. Chen,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
Resonant-cavity light-emitting diodes with coupled cavity
|
L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy
|
F. Y. Chang,; G. H. Liao,; C. S. Lee,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
Observation of coherent interfacial optical phonons in III-V semiconductor nanostrctures
|
Y. M. Chang,; N. A. Chang,; H. H. Lin,; C. T. Chia,; Y. F. Chen,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy
|
G. Tsai; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:09Z |
Contactless electroreflectance and surface photovoltage characterization of type-II GaAsSb/GaAs multiple quantum wells
|
H. P. Hsu; Y. S. Huang; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:08Z |
GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser
|
H. H. Lin,; P. W. Liu,; J. R. Chen,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:08Z |
InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers
|
H.-H. Lin,; D.-K. Shih,; Y.-H. Lin,; K.-H. Chiang,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:08Z |
GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers
|
HAO-HSIUNG LIN; H. H. Lin,; P. W. Liu,; G. H. Liao, |
| 臺大學術典藏 |
2018-09-10T04:35:07Z |
Temperature dependence of photoreflectance in InAs/GaAs quantum dots
|
C. M. Lai,; F. Y. Chang,; C. W. Chang,; C. H. Kao,; H. H. Lin,; G. J. Jan,; J. Lee,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:07Z |
Optical studies of strained type-II GaAs0.7Sb0.3/GaAs multiple quantum wells
|
T. T. Chen,;C. H. Chen,;W. Z. Cheng,;W. S. Su,;M. H. Ya,;Y. F. Chen,;P. W. Liu,;H. H. Lin,; T. T. Chen,; C. H. Chen,; W. Z. Cheng,; W. S. Su,; M. H. Ya,; Y. F. Chen,; P. W. Liu,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T04:35:07Z |
Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasers
|
L. W. Sung; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:35:07Z |
Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
|
F. Y. Chang; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
