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"h h lin"的相关文件
显示项目 191-200 / 259 (共26页)
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| 臺大學術典藏 |
2018-09-10T04:14:55Z |
GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs
|
W. C. Wu,; H. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE
|
L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers
|
C. T. Lee,; H. Y. Lee,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
On the InAs(N)/InGaAs quantum wells
|
T. Y. Chu,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE
|
L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well
|
P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
InAsN Grown by Plasma-assisted Gas Source MBE
|
HAO-HSIUNG LIN; T. R. Yang,; T. Y. Chu,; H. H. Lin,; D. K. Shih, |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m
|
Ding-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs
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H. C. Chiu; S. C. Yang; Y. J. Chan; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications
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S. C. Yang; H. C. Chiu; Y.-J. Chan; H. H. Lin; J.-M. Kuo; HAO-HSIUNG LIN |
显示项目 191-200 / 259 (共26页)
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