臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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机构	日期	题名	作者
臺大學術典藏	2018-09-10T07:41:15Z	InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy	C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:15Z	Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD	Y. C. Chin;H. H. Lin;C. H. Huang;M. N. Tseng; Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy	J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells	G. R. Chen,; J. S. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Light emission and detection by metal oxide silicon tunneling diodes	C. W. Liu,; M. H. Lee,; C. F. Lin,; I. C. Lin,; W. T. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN	T. C. Ma;H. H. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN	Y. T. Lin;T. C. Ma;S. P. Wang;H. H. Lin; Y. T. Lin; T. C. Ma; S. P. Wang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:13Z	Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures	C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:13Z	Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN	S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:13Z	InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy	J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:12Z	Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance	J. C. Fan; Y. F. Chen; D. Y. Lin; Y. S. Huang; M. C. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:12Z	Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy	K. T. Tsen; D. K. Ferry; J. S. Wang; C. S. Huang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:12Z	GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer	Y. R. Lin,;Y. F. Lai,;C. P. Liu,;H. H. Lin,; Y. R. Lin,; Y. F. Lai,; C. P. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:12Z	Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,	H. P. Hsu,;Y. N. Huang,;Y. S. Huang,;Y. T. Lin,;T. C. Ma,;H. H. Lin,;K. K. Tiong,;P. Sitarek,;J. Misiewicz,; H. P. Hsu,; Y. N. Huang,; Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; K. K. Tiong,; P. Sitarek,; J. Misiewicz,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:12Z	Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures	P. Sitarek,;H. P. Hsu,;Y. S. Huang,;J. M. Lin,;H. H. Lin,;K. K. Tiong,; P. Sitarek,; H. P. Hsu,; Y. S. Huang,; J. M. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:11Z	Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy	J. S. Liu,; J. S. Wang,; K. Y. Hsieh,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN	S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Band structure of dilute nitride GaAsSbN	Y. T. Lin;T. C. Ma;T. Y. Chen;H. H. Lin; Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Photoluminescence study of InAsPSb epilayers grown on GaAs substrates	Y. C. Chou,;G. Tsai,;H. H. Lin,; Y. C. Chou,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers	Y. R. Lin;J. H. Chu;H. H. Lin; Y. R. Lin; J. H. Chu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:02Z	Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction	C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	Origin of the annealing-induced blue-shift in GaAsSbN	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	GaAsSbN/GaAs long wavelength PIN detectors	C. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy	H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:08:01Z	Band alignment of InAsSb/InAsPSb quantum well	C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN

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