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機構	日期	題名	作者
臺大學術典藏	2018-09-10T08:17:50Z	The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy	J. M. Lin,;L. C. Chou,;H. H. Lin,; J. M. Lin,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:50Z	Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE	T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:49Z	Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy	H. P. Hsu,;Y. S. Huang,;Y. T. Lin,;H. H. Lin,;K. K. Tiong,; H. P. Hsu,; Y. S. Huang,; Y. T. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:49Z	Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE	T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:49Z	Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy	Y. T. Lin,;T. C. Ma,;H. H. Lin; Y. T. Lin,; T. C. Ma,; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:49Z	Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxy	S. W. Lo,;C. J. Wu,;H. H. Lin,; S. W. Lo,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:48Z	In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor	Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:17Z	Effects of plasma conditions on the nitrogen incorporation behaviors in GaAsSbN grown by plasma-assisted gas-source molecular beam epitaxy	T. C. Ma;H. H. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:17Z	Thermal quenching of the photoluminescence of InAsSb/InAsPSb multiple quantum wells	C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:17Z	Nitrogen atomic rearrangement in thermally annealed GaAsSbN	Y. T. Lin,;T. C. Ma,;H. H. Lin,;J. D. Wu,;Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; J. D. Wu,; Y. S. Huang,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:17Z	Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye	H. H. Lin;T. C. Ma;Y. R. Lin;J. P. Wang;C. H. Huang; H. H. Lin; T. C. Ma; Y. R. Lin; J. P. Wang; C. H. Huang; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:16Z	Photoluminescence of InAsSb/InAsPSb quantum well	C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:16Z	The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells	J. M. Lin,;L. C. Chou,;H. H. Lin; J. M. Lin,; L. C. Chou,; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:16Z	Molecular-beam epitaxy of mid-infrared InAsPSb/InAsSb heterostrucrures	H. H. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:16Z	A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species	Y. T. Lin;T. C. Ma;H. H. Lin; Y. T. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:15Z	InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy	C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:15Z	Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD	Y. C. Chin;H. H. Lin;C. H. Huang;M. N. Tseng; Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy	J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells	G. R. Chen,; J. S. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Light emission and detection by metal oxide silicon tunneling diodes	C. W. Liu,; M. H. Lee,; C. F. Lin,; I. C. Lin,; W. T. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN	T. C. Ma;H. H. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:14Z	Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN	Y. T. Lin;T. C. Ma;S. P. Wang;H. H. Lin; Y. T. Lin; T. C. Ma; S. P. Wang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:13Z	Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures	C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:13Z	Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN	S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:41:13Z	InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy	J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN

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