| 臺大學術典藏 |
2018-09-10T06:34:43Z |
Comparative study of InAs quantum dots with different InGaAs capping methods
|
C. H. Lin; W. W. Pai; F. Y. Chang; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:43Z |
Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells
|
H. P. Hsu,; P. Sitarek,; Y. S. Huang,; P. W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:02:01Z |
Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy
|
T. C. Ma; Y. T. Lin; T. Y. Chen; H. H. Lin; T. C. Ma,; Y. T. Lin,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:02:00Z |
Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy
|
Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:02:00Z |
A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy
|
J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:02:00Z |
Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy
|
D. L. Wang,; G. Tsai,; C. J. Wu,; C. E. Wu,; F. Tseng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
MBE growth of quaternary InAsPSb alloy
|
H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
GaAsSbN grown on GaAs by gas source molecular beam epitaxy
|
T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy
|
G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
Mid-infrared InAsPSb/InAsSb quantum-well light emitter
|
C. E. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy
|
G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy
|
T. Y. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer
|
C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes
|
A. Krier,; M. Stone,; Q. D. Zhuang,; P. W. Liu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonics
|
Y. C. Wen; K. H. Lin; T. F. Kao; L. C. Chou; H. H. Lin; C. K. Sun; HAO-HSIUNG LIN; CHI-KUANG SUN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy
|
P. W. Liu,; G. Tsai,; H. H. Lin,; A. Krier,; Q. D. Zhuang,; M. Stone,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:32Z |
Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy
|
P. W. Liu,; G. Tsai,; H. H. Lin,; T. Krier,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:32Z |
Growth of InPSb on InAs inside a miscibility gap using gas source MBE
|
G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:32Z |
Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells
|
H. P. Hsu,; Y. S. Huang,; P.W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:32Z |
Numerical simulation on optical properties of GaN/AlN quantum dots
|
C. Y. Chen,; C. M. Lai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:32Z |
The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well
|
G. L. Wang,; Y. S. Huang,; H. H. Lin,; C. H. Chan,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
GaAsSb/GaAs quantum wells grown by MBE
|
H. H. Lin,; P. W. Liu,; C. L. Tsai,; G. H. Liao,; J. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
Study on the band line-up of GaAsSb/GaAs quantum wells
|
C. L. Tsai,; P. W. Liu,; G. H. Liao,; M. H. Lee,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
InAs/InGaAs/GaAs coupled quantum-dot laser
|
C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
InPSb bulk layers grown by gas source molecular beam epitaxy
|
G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
