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Showing items 151-200 of 259 (6 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T05:26:31Z	Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasers	C. L. Tsai,; C. T. Wan,; P. W. Liu,; G. H. Liao,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:30Z	Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents	H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:30Z	Performance evaluation of field-enhanced p-channel split-gate flash memory	W. T. Chu,; H. H. Lin,; Y. H. Wang,; C. T. Hsieh,; Y. T. Lin,; C. S. Wang,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:30Z	Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers	C. R. Lu,; H. L. Liu,; J. R. Lee,; C. H. Wu,; H. H. Lin,; L. W. Sung,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:30Z	Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents	H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:49Z	Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers	G. H. Liao,; C. L. Tsai,; P. W. Liu,; J. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:49Z	GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes	H. H. Lin,; P. W. Liu,; G. H. Liao,; C. L. Tsai,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:49Z	Growth of InAs quantum dots with light emission at 1.3 m	F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:48Z	MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications	G. Tsai,; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:48Z	Study on high-power resonant-cavity light-emitting diodes	L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:48Z	Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection	C. H. Yu,; K. K. Kao,; M. H. Mao,; F. Y. Chang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:48Z	Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm	F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:47Z	Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy	T. S. Lay,; W. T. Kuo,; L. P. Chen,; Y. H. Lai,; H. Hung,; J. S. Wang,; J. Y. Chi,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:47Z	Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells	T. T. Chen,; W. S. Su,; Y. F. Chen,; P. W. Liu,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN
臺大學術典藏	2018-09-10T04:58:47Z	Relaxation oscillations and damping factors of 1.3m In(Ga)As/GaAs quantum-dot lasers	M.-H. Mao,; T.-Y. Wu,; D.-C. Wu,; F.-Y. Chang,; H.-H. Lin,; MING-HUA MAO; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:46Z	Photoreflectance study on the interface of InGaP/GaAs heterostructure grown by gas source molecular beam epitaxy	C. M. Lai,; F. Y. Chang,; H. H. Lin,; G. J. Jan,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:46Z	Observation of coherent interfacial optical phonons in GaInP/GaAs/GaInP single quantum wells	Y.-M. Chang,; H. H. Lin,; C. T. Chia,; Y. F. Chen,; HAO-HSIUNG LIN; YANG-FANG CHEN
臺大學術典藏	2018-09-10T04:58:46Z	Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Subnikov de-Haas oscillation	D. R. Hang,; D. K. Shih,; C. F. Huang,; W. K. Hung,; Y. H. Chang,; Y. F. Chen,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN
臺大學術典藏	2018-09-10T04:35:09Z	Resonant-cavity light-emitting diodes with coupled cavity	L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:35:09Z	InAs/InGaAs quantum dot laser grown by solid source molecular-beam epitaxy	F. Y. Chang,; G. H. Liao,; C. S. Lee,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:35:09Z	Observation of coherent interfacial optical phonons in III-V semiconductor nanostrctures	Y. M. Chang,; N. A. Chang,; H. H. Lin,; C. T. Chia,; Y. F. Chen,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:35:09Z	Growth of InAsSb alloy on InAs substrate using solid source molecular beam epitaxy	G. Tsai; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:35:09Z	Contactless electroreflectance and surface photovoltage characterization of type-II GaAsSb/GaAs multiple quantum wells	H. P. Hsu; Y. S. Huang; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:35:08Z	GaAsSb/GaAs type-II quantum well and its application on ~1.3m laser	H. H. Lin,; P. W. Liu,; J. R. Chen,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:35:08Z	InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers	H.-H. Lin,; D.-K. Shih,; Y.-H. Lin,; K.-H. Chiang,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:35:08Z	GaAsSb/GaAs type-II quantum wells for 1.3m diode lasers	HAO-HSIUNG LIN; H. H. Lin,; P. W. Liu,; G. H. Liao,
臺大學術典藏	2018-09-10T04:35:07Z	Temperature dependence of photoreflectance in InAs/GaAs quantum dots	C. M. Lai,; F. Y. Chang,; C. W. Chang,; C. H. Kao,; H. H. Lin,; G. J. Jan,; J. Lee,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:35:07Z	Optical studies of strained type-II GaAs0.7Sb0.3/GaAs multiple quantum wells	T. T. Chen,;C. H. Chen,;W. Z. Cheng,;W. S. Su,;M. H. Ya,;Y. F. Chen,;P. W. Liu,;H. H. Lin,; T. T. Chen,; C. H. Chen,; W. Z. Cheng,; W. S. Su,; M. H. Ya,; Y. F. Chen,; P. W. Liu,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN
臺大學術典藏	2018-09-10T04:35:07Z	Highly-strained 1.24-μm InGaAs/GaAs quantum-well lasers	L. W. Sung; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:35:07Z	Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers	F. Y. Chang; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:35:06Z	A study of optical properties of InGaAs/GaAs quantum dots	C. M. Lai; F. Y. Chang; H. H. Lin; an G. J. Jan; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:35:06Z	Band Gap Reduction in InAsN Alloys	D. K. Shih; H. H. Lin; L. W. Sung; T. Y. Chu; T. R. Yang; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:35:06Z	Optical properties of InAs1-xNx/In0.53Ga0.47As single quantum wells grown by gas source molecular beam epitaxy	D. K. Shih,; HAO-HSIUNG LIN; H. H. Lin,; J. S. Wang,; G. R. Chen,
臺大學術典藏	2018-09-10T04:14:57Z	Raman scattering characterization of InAsN bulk film on (100) InP substrates	D. K. Shih,; H. H. Lin,; Y. F. Chen,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:57Z	Low-threshold ~1.3m GaAsSb quantum well laser	P. W. Liu,; M. H. Lee,; J. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:57Z	1.3m InAs/InGaAs quantum dot lasers grown by GSMBE	F. Y. Chang; T. C. Wu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:57Z	Optical characterization on InAs/GaAs quantum dots	C. M. Lai,; F. Y. Chang,; C. W. Chang,; H. H. Lin,; G. J. Jan,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:56Z	Growth and characterization of low-threshold 1.3m GaAsSb quantum well laser	P.-W. Liu,; M.-H. Lee,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:56Z	Femtosecond carrier dynamics in InGaAsN single quantum well	L. W. Sung,; H. H. Lin,; B. R. Wu,; N. T. Yeh,; HAO-HSIUNG LIN; T. M. Liu,; M. C. Tien,; J. W. Shi,; C. K. Sun,
臺大學術典藏	2018-09-10T04:14:56Z	1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE	L. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:55Z	GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs	W. C. Wu,; H. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:55Z	Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE	L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:55Z	Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers	C. T. Lee,; H. Y. Lee,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:04Z	On the InAs(N)/InGaAs quantum wells	T. Y. Chu,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:04Z	Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE	L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:04Z	Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well	P. W. Liu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:04Z	InAsN Grown by Plasma-assisted Gas Source MBE	HAO-HSIUNG LIN; T. R. Yang,; T. Y. Chu,; H. H. Lin,; D. K. Shih,
臺大學術典藏	2018-09-10T03:50:03Z	InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m	Ding-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:03Z	High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs	H. C. Chiu; S. C. Yang; Y. J. Chan; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:03Z	(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications	S. C. Yang; H. C. Chiu; Y.-J. Chan; H. H. Lin; J.-M. Kuo; HAO-HSIUNG LIN

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