| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy
|
Y. R. Chen,;L. C. Chou,;Y. J. Yang,;H. H. Lin,; Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Evidence of nitrogen reorganization in GaAsSbN alloys
|
H. P. Hsu;Y. T. Lin;H. H. Lin; H. P. Hsu; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction
|
Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs
|
C. J. Wu;Z. C. Feng;W. M. Chang;C. C. Yang;H. H. Lin; C. J. Wu; Z. C. Feng; W. M. Chang; C. C. Yang; H. H. Lin; HAO-HSIUNG LIN; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Electron transport in a GaPSb film
|
S. T. Lo; H. E. Lin; S.-W. Wang; H. D. Lin; Y. C. Chin; H. H. Lin; J. C. Lin; C. T. Liang; S. T. Lo; H. E. Lin; S.-W. Wang; H. D. Lin; Y. C. Chin; H. H. Lin; J. C. Lin; C. T. Liang; CHI-TE LIANG; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Electronic and structureal properties of GaAs0.64P0.19Sb0.17 on GaAs
|
Y. C. Chin;J. Y. Chen;B. H. Chen;H. S. Tsai;Y. S. Huang;H. H. Lin; Y. C. Chin; J. Y. Chen; B. H. Chen; H. S. Tsai; Y. S. Huang; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Study on the structural properties of InP0.52Sb0.48 on GaAs
|
C. J. Wu,;G. T. Chen,;Z. C. Feng,;W. M. Chang,;C. C. Yang,;H. H. Lin,; C. J. Wu,; G. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:01Z |
Study on the short range structure of InP0.52Sb0.48 grown by gas-source molecular-beam epitaxy
|
C. J. Wu,; K. T. Chen,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:01Z |
Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy
|
Y. T. Lin,; J. S. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:01Z |
X-ray absorption find structures of InPSb alloys
|
C. J. Wu,; K. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells
|
J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction
|
F. Cheng,; T. Fa,; S. Yao,; C. J. Wu,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Preparation and characterization of p-type Fe2O3 pellets from Mg doping in pure oxygen atmosphere at high temperatures
|
Y. W. Tai,; C. C. Yang,; M. H. Yang,; C. S. Hong,; H. H. Lin,; B. Z. Wan,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Orentation dependent phase separation in GaAsSb
|
Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Structural properties of (111)B GaAsSb grown on GaAs substrates
|
Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:45:59Z |
Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE
|
K. J. Cheetham,; A. Krier,; I. Patel,; J. S. Tzeng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:52Z |
Hetero-epitaxy of InAs on patterened Si (100) substrates
|
Y. T. Lin;Y. R. Lin;C. H. Ko;C. H. Wann;H. H. Lin; Y. T. Lin; Y. R. Lin; C. H. Ko; C. H. Wann; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:52Z |
InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy
|
C. J. Wu,;S. W. Lo,;H. H. Lin,; C. J. Wu,; S. W. Lo,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:52Z |
Synchrotron radiation X-ray absorption investigation of InAsPSb films on GaAs by molecular beam epitaxy
|
Y. R. Lan,;C. J. Wu,;H. H. Lin,;L. Y. Chang,;Z. C. Feng,; Y. R. Lan,; C. J. Wu,; H. H. Lin,; L. Y. Chang,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:51Z |
Temperature dependent photoluminescence of InAsSb/InAsPSb multiple quantum well
|
C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:51Z |
X-ray absorption fine-structure spectroscopy of InAsPSb grown by gas-source molecular-beam epitaxy
|
C. J. Wu,;Y. R. Lan,;L. Y. Chang,;Z. C. Feng,;H. H. Lin,; C. J. Wu,; Y. R. Lan,; L. Y. Chang,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:51Z |
Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy
|
J. S. Tzeng,;C. J. Wu,;C. J. Hong-Liao,;H. H. Lin,; J. S. Tzeng,; C. J. Wu,; C. J. Hong-Liao,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Optical properties of As-rich InAsSb/InAsPSb multiple quantum well
|
C. J. Wu,;G. Tsai,;H. H. Lin; C. J. Wu,; G. Tsai,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Raman scattering in InAsPSb quaternary alloys
|
J. S. Tzeng,;C. J. Wu,;H. H. Lin,; J. S. Tzeng,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy
|
Y. R. Lan,;C. J. Wu,;H. H. Lin,;T. S. Chan,;Z. C. Feng,; Y. R. Lan,; C. J. Wu,; H. H. Lin,; T. S. Chan,; Z. C. Feng,; HAO-HSIUNG LIN |
