English  |  正體中文  |  简体中文  |  0  
???header.visitor??? :  52095145    ???header.onlineuser??? :  946
???header.sponsordeclaration???
 		 
???search.scope??? ???search.advance???
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
???ui.leftmenu.abouttair???
???ui.leftmenu.explanation???

???ui.leftmenu.bartitle???
Repositories
Author
Title
Date
???ui.leftmenu.statisticschart???
???ui.leftmenu.realtimefacts???
???ui.leftmenu.trend???

???index.news???
2019臺灣學術機構典藏
研討會
機構典藏系統RC7版本已
發佈

???ui.leftmenu.copyrighttitle???
???ui.leftmenu.copyrightpublisher???
???ui.leftmenu.copyrightconference???

???ui.leftmenu.link???
機構典藏計畫網站
ROAR
OpenDOAR
SHERPA
OAIster
JAIRO
Ira
DSPACE
RWWR
臺大學術典藏NTU Scholars
???tair.name??? >  ???browser.page.title.author???

"h h lin"???jsp.browse.items-by-author.description???

???jsp.browse.items-by-author.back???
???jsp.browse.items-by-author.order1??? ???jsp.browse.items-by-author.order2???

Showing items 61-110 of 259  (6 Page(s) Totally)
<< < 1 2 3 4 5 6 > >>
View [10|25|50] records per page

Institution Date Title Author
臺大學術典藏 2018-09-10T08:17:50Z The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy J. M. Lin,;L. C. Chou,;H. H. Lin,; J. M. Lin,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:17:50Z Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:17:49Z Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy H. P. Hsu,;Y. S. Huang,;Y. T. Lin,;H. H. Lin,;K. K. Tiong,; H. P. Hsu,; Y. S. Huang,; Y. T. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:17:49Z Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:17:49Z Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy Y. T. Lin,;T. C. Ma,;H. H. Lin; Y. T. Lin,; T. C. Ma,; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:17:49Z Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxy S. W. Lo,;C. J. Wu,;H. H. Lin,; S. W. Lo,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T08:17:48Z In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:17Z Effects of plasma conditions on the nitrogen incorporation behaviors in GaAsSbN grown by plasma-assisted gas-source molecular beam epitaxy T. C. Ma;H. H. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:17Z Thermal quenching of the photoluminescence of InAsSb/InAsPSb multiple quantum wells C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:17Z Nitrogen atomic rearrangement in thermally annealed GaAsSbN Y. T. Lin,;T. C. Ma,;H. H. Lin,;J. D. Wu,;Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; J. D. Wu,; Y. S. Huang,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:17Z Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye H. H. Lin;T. C. Ma;Y. R. Lin;J. P. Wang;C. H. Huang; H. H. Lin; T. C. Ma; Y. R. Lin; J. P. Wang; C. H. Huang; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:16Z Photoluminescence of InAsSb/InAsPSb quantum well C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:16Z The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells J. M. Lin,;L. C. Chou,;H. H. Lin; J. M. Lin,; L. C. Chou,; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:16Z Molecular-beam epitaxy of mid-infrared InAsPSb/InAsSb heterostrucrures H. H. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:16Z A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species Y. T. Lin;T. C. Ma;H. H. Lin; Y. T. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:15Z InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:15Z Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD Y. C. Chin;H. H. Lin;C. H. Huang;M. N. Tseng; Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:14Z Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:14Z Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells G. R. Chen,; J. S. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:14Z Light emission and detection by metal oxide silicon tunneling diodes C. W. Liu,; M. H. Lee,; C. F. Lin,; I. C. Lin,; W. T. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:14Z Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN T. C. Ma;H. H. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:14Z Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN Y. T. Lin;T. C. Ma;S. P. Wang;H. H. Lin; Y. T. Lin; T. C. Ma; S. P. Wang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:13Z Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:13Z Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:13Z InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:12Z Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance J. C. Fan; Y. F. Chen; D. Y. Lin; Y. S. Huang; M. C. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:12Z Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy K. T. Tsen; D. K. Ferry; J. S. Wang; C. S. Huang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:12Z GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer Y. R. Lin,;Y. F. Lai,;C. P. Liu,;H. H. Lin,; Y. R. Lin,; Y. F. Lai,; C. P. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:12Z Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy, H. P. Hsu,;Y. N. Huang,;Y. S. Huang,;Y. T. Lin,;T. C. Ma,;H. H. Lin,;K. K. Tiong,;P. Sitarek,;J. Misiewicz,; H. P. Hsu,; Y. N. Huang,; Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; K. K. Tiong,; P. Sitarek,; J. Misiewicz,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:12Z Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures P. Sitarek,;H. P. Hsu,;Y. S. Huang,;J. M. Lin,;H. H. Lin,;K. K. Tiong,; P. Sitarek,; H. P. Hsu,; Y. S. Huang,; J. M. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:11Z Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy J. S. Liu,; J. S. Wang,; K. Y. Hsieh,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:02Z Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:02Z Band structure of dilute nitride GaAsSbN Y. T. Lin;T. C. Ma;T. Y. Chen;H. H. Lin; Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:02Z Photoluminescence study of InAsPSb epilayers grown on GaAs substrates Y. C. Chou,;G. Tsai,;H. H. Lin,; Y. C. Chou,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:02Z Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers Y. R. Lin;J. H. Chu;H. H. Lin; Y. R. Lin; J. H. Chu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:02Z Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:01Z Origin of the annealing-induced blue-shift in GaAsSbN Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:01Z GaAsSbN/GaAs long wavelength PIN detectors C. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:01Z Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:01Z Band alignment of InAsSb/InAsPSb quantum well C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:01Z Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics Q. Zhuang,;A. Godenir,;A. Krier, G. Tsai,;H. H. Lin,; Q. Zhuang,; A. Godenir,; A. Krier, G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:01Z Band alignment of InAsSb/InAsPSb quantum wells C. J. Wu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:00Z Design and fabrication of AlGaAs ambient light detectors T. C. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:00Z Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics Q. Zhuang,;A. Godenir,;A. Krier,;G. Tsai,;H. H. Lin,; Q. Zhuang,; A. Godenir,; A. Krier,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:00Z Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance S. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; H. H. Lin; P. W. Liu; G. Tsai; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:00Z Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructure Y. H. Chang; C. T. Liang; N. Aoki; Y. Ochiai; C. F. Huang; L. H. Lin; K. A. Cheng; H. H. Cheng; H. H. Lin; S. D. Lin; K. Y. Chen,; HAO-HSIUNG LINet al.
臺大學術典藏 2018-09-10T07:07:59Z Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:07:59Z Probing Landau quantization with the presence of insulator-quantum Hall transitions in two-dimensional GaAs electron systems Y. H. Chang; C. T. Liang; N. Aoki; Y. Ochiai; C. F. Huang; L. H. Lin; K. A. Cheng; H. H. Cheng; H. H. Lin; J. Y. Wu; S. D. Lin; K. Y. Chen,; CHI-TE LIANG; HAO-HSIUNG LINet al.
臺大學術典藏 2018-09-10T07:07:58Z Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells T. S. Wang;J. T. Tsai;K. I. Lin;J. S. Hwang;H. H. Lin;L. C. Chou; T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; H. H. Lin; L. C. Chou; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T06:34:59Z Narrow Band Gap Semiconductor H. H. Lin; J. B. Kuo; JAMES-B KUO

Showing items 61-110 of 259  (6 Page(s) Totally)
<< < 1 2 3 4 5 6 > >>
View [10|25|50] records per page

DSpace Software Copyright © 2002-2004  MIT   &  Hewlett-Packard   /   Enhanced by   NTU Library IR team