| 臺大學術典藏 |
2018-09-10T07:41:11Z |
Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy
|
J. S. Liu,; J. S. Wang,; K. Y. Hsieh,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN
|
S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Band structure of dilute nitride GaAsSbN
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Y. T. Lin;T. C. Ma;T. Y. Chen;H. H. Lin; Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Photoluminescence study of InAsPSb epilayers grown on GaAs substrates
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Y. C. Chou,;G. Tsai,;H. H. Lin,; Y. C. Chou,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers
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Y. R. Lin;J. H. Chu;H. H. Lin; Y. R. Lin; J. H. Chu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction
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C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Origin of the annealing-induced blue-shift in GaAsSbN
|
Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
GaAsSbN/GaAs long wavelength PIN detectors
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C. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy
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H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum well
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C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics
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Q. Zhuang,;A. Godenir,;A. Krier, G. Tsai,;H. H. Lin,; Q. Zhuang,; A. Godenir,; A. Krier, G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum wells
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C. J. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Design and fabrication of AlGaAs ambient light detectors
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T. C. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics
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Q. Zhuang,;A. Godenir,;A. Krier,;G. Tsai,;H. H. Lin,; Q. Zhuang,; A. Godenir,; A. Krier,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance
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S. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; H. H. Lin; P. W. Liu; G. Tsai; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Probing insulator-quantum Hall transitions near the onset of Landau quantization in GaAs/AlGaAs heterostructure
|
Y. H. Chang; C. T. Liang; N. Aoki; Y. Ochiai; C. F. Huang; L. H. Lin; K. A. Cheng; H. H. Cheng; H. H. Lin; S. D. Lin; K. Y. Chen,; HAO-HSIUNG LINet al. |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy
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T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Probing Landau quantization with the presence of insulator-quantum Hall transitions in two-dimensional GaAs electron systems
|
Y. H. Chang; C. T. Liang; N. Aoki; Y. Ochiai; C. F. Huang; L. H. Lin; K. A. Cheng; H. H. Cheng; H. H. Lin; J. Y. Wu; S. D. Lin; K. Y. Chen,; CHI-TE LIANG; HAO-HSIUNG LINet al. |
| 臺大學術典藏 |
2018-09-10T07:07:58Z |
Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells
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T. S. Wang;J. T. Tsai;K. I. Lin;J. S. Hwang;H. H. Lin;L. C. Chou; T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; H. H. Lin; L. C. Chou; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:59Z |
Narrow Band Gap Semiconductor
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H. H. Lin; J. B. Kuo; JAMES-B KUO |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors
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Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Effect of thermal annealing on the optical properties of GaAsSbN
|
Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally
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C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Origin of the annealing-induced blue-shift in GaAsSbN bulk layers
|
Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy
|
G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy
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C. J. Wu,; G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy
|
G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates
|
T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m
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C. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10
|
I. C. Chen; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy
|
L. C. Chou; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy
|
S. A. Cripps,; T. J. C. Hosea,; A. Krier,; V. Smirnov,; P. J. Batty,; Q. D. Zhuang,; H. H. Lin,; P. W. Liu,; G. Tsai,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy
|
T. C. Ma,; Y. T. Lin,; T. Y. Chen,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:43Z |
Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies
|
T. T. Chen,; C. L. Cheng,; Y. F. Chen,; F. Y. Chang,; H. H. Lin,; C. T. Wu,; C. H. Chen,; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T06:34:43Z |
InAsPSb quaternary alloy grown by gas source molecular beam epitaxy
|
Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN; G. Tsai,; D. L. Wang,; C. E. Wu,; C. J. Wu, |
| 臺大學術典藏 |
2018-09-10T06:34:43Z |
Comparative study of InAs quantum dots with different InGaAs capping methods
|
C. H. Lin; W. W. Pai; F. Y. Chang; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:43Z |
Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells
|
H. P. Hsu,; P. Sitarek,; Y. S. Huang,; P. W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:02:01Z |
Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy
|
T. C. Ma; Y. T. Lin; T. Y. Chen; H. H. Lin; T. C. Ma,; Y. T. Lin,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:02:00Z |
Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy
|
Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:02:00Z |
A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy
|
J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:02:00Z |
Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy
|
D. L. Wang,; G. Tsai,; C. J. Wu,; C. E. Wu,; F. Tseng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
MBE growth of quaternary InAsPSb alloy
|
H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
GaAsSbN grown on GaAs by gas source molecular beam epitaxy
|
T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy
|
G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
Mid-infrared InAsPSb/InAsSb quantum-well light emitter
|
C. E. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy
|
G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:59Z |
Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy
|
T. Y. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer
|
C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes
|
A. Krier,; M. Stone,; Q. D. Zhuang,; P. W. Liu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:01:58Z |
Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonics
|
Y. C. Wen; K. H. Lin; T. F. Kao; L. C. Chou; H. H. Lin; C. K. Sun; HAO-HSIUNG LIN; CHI-KUANG SUN |
