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Showing items 71-120 of 292 (6 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T09:50:18Z	Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001)	D. N. Talwar,;T. R. Yang,;H. H. Lin,;Z. C. Feng,; D. N. Talwar,; T. R. Yang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:18Z	Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation	K. I. Lin;K. L. Lin;B. W. Wang;H. H. Lin;J. S. Huang; K. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:18Z	Raman characterization of primary and double twinning for (111)B GaAsSb grown on GaAs	Y. R. Chen,;H. H. Lin; Y. R. Chen,; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:18Z	Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate	Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN; H. M. Wu,;Y. J. Yang,;H. H. Lin,; H. M. Wu,
臺大學術典藏	2018-09-10T09:50:18Z	Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scattering	B. W. Wang,;C. J. Hong-Liao,;H. H. Lin,;Z. C. Feng,; B. W. Wang,; C. J. Hong-Liao,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:18Z	GaAsPSb and its application to heterojunction bipolar transistors	Y. C. Chin,;H. H. Lin,;H. S. Guo,;C. H. Huang,; Y. C. Chin,; H. H. Lin,; H. S. Guo,; C. H. Huang,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:50:18Z	Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure	Y. C. Chin,; H. S. Tsai,; H. H. Lin,; HAO-HSIUNG LIN; J. Y. Chen,;B. H. Chen,;Y. S. Huang,;Y. C. Chin,;H. S. Tsai,;H. H. Lin,; J. Y. Chen,; B. H. Chen,; Y. S. Huang,
臺大學術典藏	2018-09-10T09:24:41Z	A study on the p-InGaP layer of InGaP/InGaAs/Ge triple-junction solar cells	H. M. Wu;S. J. Tsai;H. I. Ho;H. H. Lin;Y. J. Yang; H. M. Wu; S. J. Tsai; H. I. Ho; H. H. Lin; Y. J. Yang; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:24:41Z	Selective etching of InAsPSb and GaSb in HCl-H2O2-H2O solution	S. H. Li;C. J. Wu;H. H. Lin; S. H. Li; C. J. Wu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:24:41Z	Slanted InAs nanowires gorwn by GSMBE	W. C. Chen,;L. H. Chen,;Y. T. Lin,;H. H. Lin,; W. C. Chen,; L. H. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:24:41Z	Local environment study of dilute nitride GaAsSbN with X-ray absorption fine structure spectroscopy	C. L. Chiou,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN; C. L. Chiou,;Z. C. Feng,;H. H. Lin,
臺大學術典藏	2018-09-10T09:24:40Z	Structural properties of GaAsSb grown on GaAs	Y. R. Chen,;L. C. Chou,;Y. J. Yang,;H. H. Lin,; Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:24:40Z	Study on the lattice structure of InAsPSb grown on GaAs	G. T. Chen,;C. J. Wu,;Z. C. Feng,;H. H. Lin,; G. T. Chen,; C. J. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:24:40Z	Short range structure of dilute nitride GaAsSbN	H. H. Lin,;C. L. Chiou,;Y. T. Lin,;T. C. Ma,;J. S. Wu,;Z. C. Feng,; H. H. Lin,; C. L. Chiou,; Y. T. Lin,; T. C. Ma,; J. S. Wu,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:24:40Z	Sb-based zincblende alloys with strong structural disorder	HAO-HSIUNG LIN; H. H. Lin; H. H. Lin
臺大學術典藏	2018-09-10T09:24:40Z	Defects probing by temperature dependence Raman scattering of GaAsSbN	J. Wu;Y. T. Lin;H. H. Lin; J. Wu; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:24:39Z	Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy	Y. R. Chen,;L. C. Chou,;Y. J. Yang,;H. H. Lin,; Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:24:39Z	Evidence of nitrogen reorganization in GaAsSbN alloys	H. P. Hsu;Y. T. Lin;H. H. Lin; H. P. Hsu; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:24:39Z	InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction	Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:24:39Z	Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs	C. J. Wu;Z. C. Feng;W. M. Chang;C. C. Yang;H. H. Lin; C. J. Wu; Z. C. Feng; W. M. Chang; C. C. Yang; H. H. Lin; HAO-HSIUNG LIN; CHIH-CHUNG YANG
臺大學術典藏	2018-09-10T09:24:39Z	Electron transport in a GaPSb film	S. T. Lo; H. E. Lin; S.-W. Wang; H. D. Lin; Y. C. Chin; H. H. Lin; J. C. Lin; C. T. Liang; S. T. Lo; H. E. Lin; S.-W. Wang; H. D. Lin; Y. C. Chin; H. H. Lin; J. C. Lin; C. T. Liang; CHI-TE LIANG; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:24:39Z	Electronic and structureal properties of GaAs0.64P0.19Sb0.17 on GaAs	Y. C. Chin;J. Y. Chen;B. H. Chen;H. S. Tsai;Y. S. Huang;H. H. Lin; Y. C. Chin; J. Y. Chen; B. H. Chen; H. S. Tsai; Y. S. Huang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:24:39Z	Study on the structural properties of InP0.52Sb0.48 on GaAs	C. J. Wu,;G. T. Chen,;Z. C. Feng,;W. M. Chang,;C. C. Yang,;H. H. Lin,; C. J. Wu,; G. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T09:22:27Z	Short channel effects on gallium nitride/gallium oxide nanowire transistors	Yu, J.-W.; Yeh, P.-C.; Wang, S.-L.; Wu, Y.-R.; Mao, M.-H.; Lin, H.-H.; Peng, L.-H.; MING-HUA MAO; HAO-HSIUNG LIN; LUNG-HAN PENG; YUH-RENN WU
臺大學術典藏	2018-09-10T08:46:01Z	Study on the short range structure of InP0.52Sb0.48 grown by gas-source molecular-beam epitaxy	C. J. Wu,; K. T. Chen,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:46:01Z	Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy	Y. T. Lin,; J. S. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:46:01Z	X-ray absorption find structures of InPSb alloys	C. J. Wu,; K. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:46:00Z	Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells	J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:46:00Z	Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction	F. Cheng,; T. Fa,; S. Yao,; C. J. Wu,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:46:00Z	Preparation and characterization of p-type Fe2O3 pellets from Mg doping in pure oxygen atmosphere at high temperatures	Y. W. Tai,; C. C. Yang,; M. H. Yang,; C. S. Hong,; H. H. Lin,; B. Z. Wan,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:46:00Z	Orentation dependent phase separation in GaAsSb	Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:46:00Z	Structural properties of (111)B GaAsSb grown on GaAs substrates	Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:45:59Z	Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE	K. J. Cheetham,; A. Krier,; I. Patel,; J. S. Tzeng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:52Z	Hetero-epitaxy of InAs on patterened Si (100) substrates	Y. T. Lin;Y. R. Lin;C. H. Ko;C. H. Wann;H. H. Lin; Y. T. Lin; Y. R. Lin; C. H. Ko; C. H. Wann; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:52Z	InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy	C. J. Wu,;S. W. Lo,;H. H. Lin,; C. J. Wu,; S. W. Lo,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:52Z	Synchrotron radiation X-ray absorption investigation of InAsPSb films on GaAs by molecular beam epitaxy	Y. R. Lan,;C. J. Wu,;H. H. Lin,;L. Y. Chang,;Z. C. Feng,; Y. R. Lan,; C. J. Wu,; H. H. Lin,; L. Y. Chang,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:52Z	環境光偵測器	?L?E??;???j?v;?L????;???T??;??????; �L�E��; ��j�v; �L��; ��T��; ��; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:51Z	Temperature dependent photoluminescence of InAsSb/InAsPSb multiple quantum well	C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:51Z	X-ray absorption fine-structure spectroscopy of InAsPSb grown by gas-source molecular-beam epitaxy	C. J. Wu,;Y. R. Lan,;L. Y. Chang,;Z. C. Feng,;H. H. Lin,; C. J. Wu,; Y. R. Lan,; L. Y. Chang,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:51Z	Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy	J. S. Tzeng,;C. J. Wu,;C. J. Hong-Liao,;H. H. Lin,; J. S. Tzeng,; C. J. Wu,; C. J. Hong-Liao,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:50Z	Optical properties of As-rich InAsSb/InAsPSb multiple quantum well	C. J. Wu,;G. Tsai,;H. H. Lin; C. J. Wu,; G. Tsai,; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:50Z	Raman scattering in InAsPSb quaternary alloys	J. S. Tzeng,;C. J. Wu,;H. H. Lin,; J. S. Tzeng,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:50Z	Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy	Y. R. Lan,;C. J. Wu,;H. H. Lin,;T. S. Chan,;Z. C. Feng,; Y. R. Lan,; C. J. Wu,; H. H. Lin,; T. S. Chan,; Z. C. Feng,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:50Z	The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy	J. M. Lin,;L. C. Chou,;H. H. Lin,; J. M. Lin,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:50Z	Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE	T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:49Z	Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy	H. P. Hsu,;Y. S. Huang,;Y. T. Lin,;H. H. Lin,;K. K. Tiong,; H. P. Hsu,; Y. S. Huang,; Y. T. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:49Z	Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE	T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:49Z	Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy	Y. T. Lin,;T. C. Ma,;H. H. Lin; Y. T. Lin,; T. C. Ma,; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:49Z	Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxy	S. W. Lo,;C. J. Wu,;H. H. Lin,; S. W. Lo,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T08:17:48Z	In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor	Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN

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