| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy
|
J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells
|
G. R. Chen,; J. S. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Light emission and detection by metal oxide silicon tunneling diodes
|
C. W. Liu,; M. H. Lee,; C. F. Lin,; I. C. Lin,; W. T. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN
|
T. C. Ma;H. H. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN
|
Y. T. Lin;T. C. Ma;S. P. Wang;H. H. Lin; Y. T. Lin; T. C. Ma; S. P. Wang; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:13Z |
Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:13Z |
Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN
|
S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:13Z |
InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy
|
J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance
|
J. C. Fan; Y. F. Chen; D. Y. Lin; Y. S. Huang; M. C. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy
|
K. T. Tsen; D. K. Ferry; J. S. Wang; C. S. Huang; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
|
Y. R. Lin,;Y. F. Lai,;C. P. Liu,;H. H. Lin,; Y. R. Lin,; Y. F. Lai,; C. P. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,
|
H. P. Hsu,;Y. N. Huang,;Y. S. Huang,;Y. T. Lin,;T. C. Ma,;H. H. Lin,;K. K. Tiong,;P. Sitarek,;J. Misiewicz,; H. P. Hsu,; Y. N. Huang,; Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; K. K. Tiong,; P. Sitarek,; J. Misiewicz,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer
|
Y. R. Lin, H. H. Lin,;J. H. Chu; Y. R. Lin, H. H. Lin,; J. H. Chu; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures
|
P. Sitarek,;H. P. Hsu,;Y. S. Huang,;J. M. Lin,;H. H. Lin,;K. K. Tiong,; P. Sitarek,; H. P. Hsu,; Y. S. Huang,; J. M. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:11Z |
Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy
|
J. S. Liu,; J. S. Wang,; K. Y. Hsieh,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:11Z |
Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy
|
Wang, Jyh-Shyang; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN
|
S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Band structure of dilute nitride GaAsSbN
|
Y. T. Lin;T. C. Ma;T. Y. Chen;H. H. Lin; Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Photoluminescence study of InAsPSb epilayers grown on GaAs substrates
|
Y. C. Chou,;G. Tsai,;H. H. Lin,; Y. C. Chou,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers
|
Y. R. Lin;J. H. Chu;H. H. Lin; Y. R. Lin; J. H. Chu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Origin of the annealing-induced blue-shift in GaAsSbN
|
Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
GaAsSbN/GaAs long wavelength PIN detectors
|
C. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy
|
H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum well
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics
|
Q. Zhuang,;A. Godenir,;A. Krier, G. Tsai,;H. H. Lin,; Q. Zhuang,; A. Godenir,; A. Krier, G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum wells
|
C. J. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Design and fabrication of AlGaAs ambient light detectors
|
T. C. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics
|
Q. Zhuang,;A. Godenir,;A. Krier,;G. Tsai,;H. H. Lin,; Q. Zhuang,; A. Godenir,; A. Krier,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance
|
S. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; H. H. Lin; P. W. Liu; G. Tsai; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy
|
T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy
|
Hsu, Hung-Pin;Huang, Yen-Neng;Huang, Ying-Sheng;Lin, Yang-Ting;Ma, Ta-Chun;Lin, Hao-Hsiung;Tiong, Kwong-Kau;Sitarek, Piotr;Misiewicz, Jan; Hsu, Hung-Pin; Huang, Yen-Neng; Huang, Ying-Sheng; Lin, Yang-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Tiong, Kwong-Kau; Sitarek, Piotr; Misiewicz, Jan; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Photoluminescence of InAs0.04P0.67Sb0.29
|
Tsai, Gene; Wang, De-Lun; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:58Z |
Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells
|
T. S. Wang;J. T. Tsai;K. I. Lin;J. S. Hwang;H. H. Lin;L. C. Chou; T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; H. H. Lin; L. C. Chou; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:58Z |
Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers
|
Chen, Cheng-Yuan; Lee, Jia-Ren; Lu, Chien-Rong; Liu, Hsiang-Lin; Sun, Li-Wen; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors
|
Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Effect of thermal annealing on the optical properties of GaAsSbN
|
Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally
|
C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Origin of the annealing-induced blue-shift in GaAsSbN bulk layers
|
Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy
|
G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
類人眼之光偵測器
|
林浩雄; 馬大鈞; 吳俊逸; HAO-HSIUNG LIN; 林浩雄; 馬大鈞; 吳俊逸 |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy
|
C. J. Wu,; G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy
|
G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates
|
T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m
|
C. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10
|
I. C. Chen; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy
|
L. C. Chou; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy
|
S. A. Cripps,; T. J. C. Hosea,; A. Krier,; V. Smirnov,; P. J. Batty,; Q. D. Zhuang,; H. H. Lin,; P. W. Liu,; G. Tsai,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures
|
Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei; HAO-HSIUNG LIN; Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy
|
Chan, C. H.;Lee, C. H.;Huang, Y. S.;Wang, J. S.;Lin, H. H.; Chan, C. H.; Lee, C. H.; Huang, Y. S.; Wang, J. S.; Lin, H. H.; Chan, C. H.; HAO-HSIUNG LIN |
