| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors
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Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Effect of thermal annealing on the optical properties of GaAsSbN
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Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally
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C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Origin of the annealing-induced blue-shift in GaAsSbN bulk layers
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Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy
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G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
類人眼之光偵測器
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林浩雄; 馬大鈞; 吳俊逸; HAO-HSIUNG LIN; 林浩雄; 馬大鈞; 吳俊逸 |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy
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C. J. Wu,; G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy
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G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates
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T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m
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C. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10
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I. C. Chen; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy
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L. C. Chou; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy
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S. A. Cripps,; T. J. C. Hosea,; A. Krier,; V. Smirnov,; P. J. Batty,; Q. D. Zhuang,; H. H. Lin,; P. W. Liu,; G. Tsai,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures
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Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei; HAO-HSIUNG LIN; Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy
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Chan, C. H.;Lee, C. H.;Huang, Y. S.;Wang, J. S.;Lin, H. H.; Chan, C. H.; Lee, C. H.; Huang, Y. S.; Wang, J. S.; Lin, H. H.; Chan, C. H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:44Z |
Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy
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T. C. Ma,; Y. T. Lin,; T. Y. Chen,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:43Z |
Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies
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T. T. Chen,; C. L. Cheng,; Y. F. Chen,; F. Y. Chang,; H. H. Lin,; C. T. Wu,; C. H. Chen,; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T06:34:43Z |
InAsPSb quaternary alloy grown by gas source molecular beam epitaxy
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Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN; G. Tsai,; D. L. Wang,; C. E. Wu,; C. J. Wu, |
| 臺大學術典藏 |
2018-09-10T06:34:43Z |
Comparative study of InAs quantum dots with different InGaAs capping methods
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C. H. Lin; W. W. Pai; F. Y. Chang; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:43Z |
Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells
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H. P. Hsu,; P. Sitarek,; Y. S. Huang,; P. W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:20:13Z |
Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures
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Yu, S.H.; Lin, Y.R.; Lin, H.H.; Yang, C.S.; Chen, T.T.; Chen, Y.F.; Shu, G.W.; Shen, J.L.; Hsiao, R.S.; Chen, J.F.; Chi, J.Y.; Wang, J.S.; HAO-HSIUNG LIN; YANG-FANG CHENet al. |
| 臺大學術典藏 |
2018-09-10T06:18:12Z |
An experimental study on Γ(2) modular symmetry in the quantum Hall system with a small spin splitting
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Huang, C.F.; Chang, Y.H.; Cheng, H.H.; Yang, Z.P.; Yeh, H.D.; Hsu, C.H.; Liang, C.-T.; Hang, D.R.; Lin, H.H.; CHI-TE LIANG; YUAN-HUEI CHANG; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:02:01Z |
Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy
|
T. C. Ma; Y. T. Lin; T. Y. Chen; H. H. Lin; T. C. Ma,; Y. T. Lin,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:02:00Z |
Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy
|
Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:02:00Z |
A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy
|
J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN |
