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Showing items 181-230 of 292 (6 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T06:34:44Z	Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy	T. C. Ma,; Y. T. Lin,; T. Y. Chen,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:43Z	Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies	T. T. Chen,; C. L. Cheng,; Y. F. Chen,; F. Y. Chang,; H. H. Lin,; C. T. Wu,; C. H. Chen,; HAO-HSIUNG LIN; YANG-FANG CHEN
臺大學術典藏	2018-09-10T06:34:43Z	InAsPSb quaternary alloy grown by gas source molecular beam epitaxy	Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN; G. Tsai,; D. L. Wang,; C. E. Wu,; C. J. Wu,
臺大學術典藏	2018-09-10T06:34:43Z	Comparative study of InAs quantum dots with different InGaAs capping methods	C. H. Lin; W. W. Pai; F. Y. Chang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:43Z	Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells	H. P. Hsu,; P. Sitarek,; Y. S. Huang,; P. W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:20:13Z	Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures	Yu, S.H.; Lin, Y.R.; Lin, H.H.; Yang, C.S.; Chen, T.T.; Chen, Y.F.; Shu, G.W.; Shen, J.L.; Hsiao, R.S.; Chen, J.F.; Chi, J.Y.; Wang, J.S.; HAO-HSIUNG LIN; YANG-FANG CHENet al.
臺大學術典藏	2018-09-10T06:18:12Z	An experimental study on Γ(2) modular symmetry in the quantum Hall system with a small spin splitting	Huang, C.F.; Chang, Y.H.; Cheng, H.H.; Yang, Z.P.; Yeh, H.D.; Hsu, C.H.; Liang, C.-T.; Hang, D.R.; Lin, H.H.; CHI-TE LIANG; YUAN-HUEI CHANG; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:01Z	Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy	T. C. Ma; Y. T. Lin; T. Y. Chen; H. H. Lin; T. C. Ma,; Y. T. Lin,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:00Z	Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:00Z	A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy	J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:00Z	Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy	D. L. Wang,; G. Tsai,; C. J. Wu,; C. E. Wu,; F. Tseng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	MBE growth of quaternary InAsPSb alloy	H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	GaAsSbN grown on GaAs by gas source molecular beam epitaxy	T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	Mid-infrared InAsPSb/InAsSb quantum-well light emitter	C. E. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy	T. Y. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:58Z	InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer	C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:58Z	Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes	A. Krier,; M. Stone,; Q. D. Zhuang,; P. W. Liu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:58Z	Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonics	Y. C. Wen; K. H. Lin; T. F. Kao; L. C. Chou; H. H. Lin; C. K. Sun; HAO-HSIUNG LIN; CHI-KUANG SUN
臺大學術典藏	2018-09-10T06:01:58Z	Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy	P. W. Liu,; G. Tsai,; H. H. Lin,; A. Krier,; Q. D. Zhuang,; M. Stone,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:57Z	Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells	Hsu, H. P.; Sitarek, P.; Huang, Y. S.; Liu, P.W.; Lin, J.M.; Lin, H. H.; Tiong, K.K.; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy	P. W. Liu,; G. Tsai,; H. H. Lin,; T. Krier,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	Growth of InPSb on InAs inside a miscibility gap using gas source MBE	G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells	H. P. Hsu,; Y. S. Huang,; P.W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	Numerical simulation on optical properties of GaN/AlN quantum dots	C. Y. Chen,; C. M. Lai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well	G. L. Wang,; Y. S. Huang,; H. H. Lin,; C. H. Chan,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:31Z	GaAsSb/GaAs quantum wells grown by MBE	H. H. Lin,; P. W. Liu,; C. L. Tsai,; G. H. Liao,; J. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:31Z	Study on the band line-up of GaAsSb/GaAs quantum wells	C. L. Tsai,; P. W. Liu,; G. H. Liao,; M. H. Lee,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:31Z	InAs/InGaAs/GaAs coupled quantum-dot laser	C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:31Z	InPSb bulk layers grown by gas source molecular beam epitaxy	G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:31Z	Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasers	C. L. Tsai,; C. T. Wan,; P. W. Liu,; G. H. Liao,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:30Z	Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents	H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:30Z	Performance evaluation of field-enhanced p-channel split-gate flash memory	W. T. Chu,; H. H. Lin,; Y. H. Wang,; C. T. Hsieh,; Y. T. Lin,; C. S. Wang,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:30Z	Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers	C. R. Lu,; H. L. Liu,; J. R. Lee,; C. H. Wu,; H. H. Lin,; L. W. Sung,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:30Z	Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents	H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:49Z	Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers	G. H. Liao,; C. L. Tsai,; P. W. Liu,; J. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:49Z	GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes	H. H. Lin,; P. W. Liu,; G. H. Liao,; C. L. Tsai,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:49Z	Growth of InAs quantum dots with light emission at 1.3 m	F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:48Z	MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications	G. Tsai,; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:48Z	Shrinkable triple self-aligned field-enhanced split-gate flash memory	Chu, Wen-Ting; Lin, Hao-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Wang, Yu-Hsiung; Lin, Yung-Tao; Wang, C.S.; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:48Z	Study on high-power resonant-cavity light-emitting diodes	L. C. Chou,; B. L. Yen,; J. D. Juang,; H. T. Jan,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:48Z	Optical gain measurement of quantum-dot structures by using a variable-stripe-length method with current injection	C. H. Yu,; K. K. Kao,; M. H. Mao,; F. Y. Chang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:48Z	Growth of InAs/InGaAs quantum dots and lasers with light emission at 1300 nm	F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:47Z	Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy	T. S. Lay,; W. T. Kuo,; L. P. Chen,; Y. H. Lai,; H. Hung,; J. S. Wang,; J. Y. Chi,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:47Z	Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells	T. T. Chen,; W. S. Su,; Y. F. Chen,; P. W. Liu,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN
臺大學術典藏	2018-09-10T04:58:47Z	High SCR design for one-transistor split-gate full-featured EEPROM	Chu, Wen-Ting; Lin, Hao-Hsiung; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Wang, C.S.; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:47Z	Relaxation oscillations and damping factors of 1.3m In(Ga)As/GaAs quantum-dot lasers	M.-H. Mao,; T.-Y. Wu,; D.-C. Wu,; F.-Y. Chang,; H.-H. Lin,; MING-HUA MAO; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:47Z	Using an ammonia treatment to improve the floating-gate spacing in split-gate flash memory	Chu, Wen-Ting; Lin, Hao-Hsiung; Tu, Yeur-Luen; Wang, Yu-Hsiung; Hsieh, Chia-Ta; Sung, Hung-Cheng; Lin, Yung-Tao; Tsai, Chia-Shiung; Wang, C.S.; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:58:46Z	Low threshold-current-density 1.3m InAs/InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy	Chang, F.Y.; Lee, J.D.; Lin, H.H.; HAO-HSIUNG LIN

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