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"hao hsiung lin"的相關文件
顯示項目 211-220 / 292 (共30頁)
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| 臺大學術典藏 |
2018-09-10T05:26:31Z |
InPSb bulk layers grown by gas source molecular beam epitaxy
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G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:31Z |
Study on the thermal characteristics of GaAsSb/GaAs type-II quantum well lasers
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C. L. Tsai,; C. T. Wan,; P. W. Liu,; G. H. Liao,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:30Z |
Photoluminescence characterization of midinfrared InNxAs1–x/In0.53Ga0.47As/InP multiquantum wells with various N contents
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H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:30Z |
Performance evaluation of field-enhanced p-channel split-gate flash memory
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W. T. Chu,; H. H. Lin,; Y. H. Wang,; C. T. Hsieh,; Y. T. Lin,; C. S. Wang,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:30Z |
Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers
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C. R. Lu,; H. L. Liu,; J. R. Lee,; C. H. Wu,; H. H. Lin,; L. W. Sung,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T05:26:30Z |
Photoluminescence characterization of mid-infrared InNxAs1-x/In0.53Ga0.47As/InP multi-quantum wells with various N contents
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H. D. Sun,; A. H. Clark,; S. Calvez,; M. D. Dawson,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
Temperature analysis and characteristics of GaAsSb/GaAs type-II quantum wells lasers
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G. H. Liao,; C. L. Tsai,; P. W. Liu,; J. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
GaAsSb/GaAs type-II quantum wells for long wavelength laser diodes
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H. H. Lin,; P. W. Liu,; G. H. Liao,; C. L. Tsai,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:49Z |
Growth of InAs quantum dots with light emission at 1.3 m
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F. Y. Chang; C. S. Lee; C. C. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:58:48Z |
MBE growth of InAsSb/InAs quantum wells and InPSb for mid-infrared applications
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G. Tsai,; H. H. Lin; HAO-HSIUNG LIN |
顯示項目 211-220 / 292 (共30頁)
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