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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T04:14:57Z	Low-threshold ~1.3m GaAsSb quantum well laser	P. W. Liu,; M. H. Lee,; J. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:57Z	1.3m InAs/InGaAs quantum dot lasers grown by GSMBE	F. Y. Chang; T. C. Wu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:57Z	Optical characterization on InAs/GaAs quantum dots	C. M. Lai,; F. Y. Chang,; C. W. Chang,; H. H. Lin,; G. J. Jan,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:56Z	Growth and characterization of low-threshold 1.3m GaAsSb quantum well laser	P.-W. Liu,; M.-H. Lee,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:56Z	Femtosecond carrier dynamics in InGaAsN single quantum well	L. W. Sung,; H. H. Lin,; B. R. Wu,; N. T. Yeh,; HAO-HSIUNG LIN; T. M. Liu,; M. C. Tien,; J. W. Shi,; C. K. Sun,
臺大學術典藏	2018-09-10T04:14:56Z	1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE	L. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:55Z	GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs	W. C. Wu,; H. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:55Z	Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE	L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:14:55Z	Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers	C. T. Lee,; H. Y. Lee,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T04:07:46Z	Nitrogen-induced enhancement of the electron effective mass in InN xAs1-x	Hung, W.K.;Cho, K.S.;Chern, M.Y.;Chen, Y.F.;Shih, D.K.;Lin, H.H.;Lu, C.C.;Yang, T.R.; Hung, W.K.; Cho, K.S.; Chern, M.Y.; Chen, Y.F.; Shih, D.K.; Lin, H.H.; Lu, C.C.; Yang, T.R.; HAO-HSIUNG LIN; YANG-FANG CHEN; MING-YAU CHERN
臺大學術典藏	2018-09-10T04:07:46Z	Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds	Chiu, Y.S.;Ya, M.H.;Su, W.S.;Chen, T.T.;Chen, Y.F.;Lin, H.H.; Chiu, Y.S.; Ya, M.H.; Su, W.S.; Chen, T.T.; Chen, Y.F.; Lin, H.H.; HAO-HSIUNG LIN; YANG-FANG CHEN
臺大學術典藏	2018-09-10T04:07:45Z	Photoluminescence study of hydrogen passivation in InAs1-xN x/InGaAs single-quantum well on InP	Ke, Y.Y.;Ya, M.H.;Chen, Y.F.;Wang, J.S.;Lin, H.H.; Ke, Y.Y.; Ya, M.H.; Chen, Y.F.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN; YANG-FANG CHEN
臺大學術典藏	2018-09-10T04:07:20Z	Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well	Hang, D.R.;Huang, C.F.;Hung, W.K.;Chang, Y.H.;Chen, J.C.;Yang, H.C.;Chen, Y.F.;Shih, D.K.;Chu, T.Y.;Lin, H.H.; Hang, D.R.; Huang, C.F.; Hung, W.K.; Chang, Y.H.; Chen, J.C.; Yang, H.C.; Chen, Y.F.; Shih, D.K.; Chu, T.Y.; Lin, H.H.; YUAN-HUEI CHANG; HAO-HSIUNG LIN; YANG-FANG CHEN
臺大學術典藏	2018-09-10T03:50:07Z	背靠背式雙波長半導體雷射元件	HAO-HSIUNG LIN; 洪儒菘; 林浩雄; 洪儒菘; 林浩雄
臺大學術典藏	2018-09-10T03:50:07Z	集總常數補償式高低通平衡至不平衡轉換器	邱煥凱; 林浩雄; HAO-HSIUNG LIN; 邱煥凱; 林浩雄
臺大學術典藏	2018-09-10T03:50:04Z	On the InAs(N)/InGaAs quantum wells	T. Y. Chu,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:04Z	Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE	L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:04Z	Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well	P. W. Liu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:04Z	InAsN Grown by Plasma-assisted Gas Source MBE	HAO-HSIUNG LIN; T. R. Yang,; T. Y. Chu,; H. H. Lin,; D. K. Shih,
臺大學術典藏	2018-09-10T03:50:03Z	InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m	Ding-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:03Z	High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs	H. C. Chiu; S. C. Yang; Y. J. Chan; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:03Z	(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications	S. C. Yang; H. C. Chiu; Y.-J. Chan; H. H. Lin; J.-M. Kuo; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:03Z	Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE	D. K. Shih,; H. H. Lin,; Y. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:03Z	Growth and Optical Characteristics of Type-II GaAsSb/GaAs Multiple Quantum well	M. H. Lee; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:02Z	Insulator-quantum Hall conductor transitions at low magnetic field	C. F. Huang,; Y. H. Chang,; C. H. Lee,; H. D. Yeh,; C.-T. Liang,; Y. F. Chen,; H. H. Lin,; H. H. Cheng,; G. J. Hwang,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:02Z	Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wells	C. H. Lee,; Y. H. Chang,; C. F. Huang,; M. Y. Huang,; H. H. Lin,; C. P. Lee,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:02Z	Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wells	G. R. Chen,; H. H. Lin,; J. S. Wang,; D. K. Shih,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:50:02Z	Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy	J. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T03:43:38Z	Blueshift of photoluminescence peak in ten periods InAs quantum dots superlattice	Lin, R.-M.;Lee, S.-C.;Lin, H.-H.;Dai, Y.-T.;Chen, Y.-F.; Lin, R.-M.; Lee, S.-C.; Lin, H.-H.; Dai, Y.-T.; Chen, Y.-F.; HAO-HSIUNG LIN; Lee, Si-Chen; YANG-FANG CHEN
臺大學術典藏	2018-09-10T03:30:12Z	Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well	Fan, J.C.; Hung, W.K.; Chen, Y.F.; Wang, J.S.; Lin, H.H.; Fan, J.C.; Hung, W.K.; Chen, Y.F.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN; JEN-CHEN FAN; YANG-FANG CHEN
臺大學術典藏	2018	Strain relaxation properties of InAsyP1-y metamorphic buffer layers for SWIR InGaAs photodetector	HAO-HSIUNG LIN;Shao-Yi Li;Jiunn-Jye Luo;Hao-Hsiung Lin;Chieh Chou;Hao-Kai Hsieh; Hao-Kai Hsieh; Chieh Chou; Hao-Hsiung Lin; Jiunn-Jye Luo; Shao-Yi Li; HAO-HSIUNG LIN
臺大學術典藏	2012-12	Structural properties of InAs nanowires grown by GSMBE	W. C. Chen,; L. H. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN; W. C. Chen,;L. H. Chen,;Y. T. Lin,;H. H. Lin,
臺大學術典藏	2012-05	MBE growth of InAs nanowires on Si	L. H. Chen,;Y. T. Lin,;H. H. Lin; L. H. Chen,; Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2010-01	Effect of thermal annealing on the blue shift of energy gap and nitrogen rearrangement in GaAsSbN	Y. T. Lin;T. C. Ma;H. H. Lin;J. D. Wu;Y. S. Huang; Y. T. Lin; T. C. Ma; H. H. Lin; J. D. Wu; Y. S. Huang; HAO-HSIUNG LIN
國立臺灣海洋大學	2008	Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy	Hung-Pin Hsu; Yen-Neng Huang; Ying-Sheng Huang; Yang-Ting Lin; Ta-Chun Ma; Hao-Hsiung Lin; Kwong-Kau Tiong; Piotr Sitarek; Jan Misiewicz
國立臺灣海洋大學	2004-01	Photoreflectance study on the interface of the InGaP/GaAs heterostructures grown by gas source molecular beam epitaxy	Gwo-Jen Jan; Chih-Ming Lai; Fu-Yu Chang; Hao-Hsiung Lin
臺大學術典藏	2002-01	Structural properties and Raman modes of InAsN bulk films on (100) InP substrates	HAO-HSIUNG LIN; Y. F. Chen,; H. H. Lin,; D. K. Shih,
臺大學術典藏	2001-01	V-III ratio effect on Cubic GaN grown by RF plasma Assisted gas source MBE	L. W. Sung,; H. H. Lin,; C. T. Chia,; HAO-HSIUNG LIN
臺大學術典藏	1999-01	InAsN quantum wells grown on InP by gas source MBE	J. S. Wang,; H. H. Lin,; L. W. Sung,; G. R. Chen,; HAO-HSIUNG LIN
國立高雄師範大學	1998	An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor (HEBT)	Jung-Hui Tsai;Shiou-Ying Cheng;Lih-Wen Laih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝
國立高雄師範大學	1997	Investigation of AlInAs/GaInAs Heterostructure-emitter-confinement bipolar transistors	Jung-Hui Tsai;Wen-Shiung Lour;Hui-Jung Shih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝
國立高雄師範大學	1996	On the recombination currents effect of heterostructure-emitter bipolar transistors	Jung-Hui Tsai;Lih-Wen Laih;Hui-Jung Shih;Wen-Chau Liu;Hao-Hsiung Lin; 蔡榮輝

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