| 臺大學術典藏 |
2018-09-10T04:14:56Z |
1.32m InGaAsN quantum well laser grown by plasma assisted GSMBE
|
L. W. Sung; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
GaAs monolithic 1.5 to 2.8GHz tunable ring oscillator with accurate quadrature outputs
|
W. C. Wu,; H. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
Cubic GaN Grown on (001) GaAs substrate by RF plasma assisted gas source MBE
|
L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:14:55Z |
Novel GaAs metal-semiconductor field-effect transistors with InGaP/GaAs multiple quantum barrier capping and buffer layers
|
C. T. Lee,; H. Y. Lee,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T04:07:46Z |
Nitrogen-induced enhancement of the electron effective mass in InN xAs1-x
|
Hung, W.K.;Cho, K.S.;Chern, M.Y.;Chen, Y.F.;Shih, D.K.;Lin, H.H.;Lu, C.C.;Yang, T.R.; Hung, W.K.; Cho, K.S.; Chern, M.Y.; Chen, Y.F.; Shih, D.K.; Lin, H.H.; Lu, C.C.; Yang, T.R.; HAO-HSIUNG LIN; YANG-FANG CHEN; MING-YAU CHERN |
| 臺大學術典藏 |
2018-09-10T04:07:46Z |
Giant polarized photoluminescence and photoconductivity in type-II GaAs/GaAsSb multiple quantum wells induced by interface chemical bonds
|
Chiu, Y.S.;Ya, M.H.;Su, W.S.;Chen, T.T.;Chen, Y.F.;Lin, H.H.; Chiu, Y.S.; Ya, M.H.; Su, W.S.; Chen, T.T.; Chen, Y.F.; Lin, H.H.; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T04:07:45Z |
Photoluminescence study of hydrogen passivation in InAs1-xN x/InGaAs single-quantum well on InP
|
Ke, Y.Y.;Ya, M.H.;Chen, Y.F.;Wang, J.S.;Lin, H.H.; Ke, Y.Y.; Ya, M.H.; Chen, Y.F.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T04:07:20Z |
Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well
|
Hang, D.R.;Huang, C.F.;Hung, W.K.;Chang, Y.H.;Chen, J.C.;Yang, H.C.;Chen, Y.F.;Shih, D.K.;Chu, T.Y.;Lin, H.H.; Hang, D.R.; Huang, C.F.; Hung, W.K.; Chang, Y.H.; Chen, J.C.; Yang, H.C.; Chen, Y.F.; Shih, D.K.; Chu, T.Y.; Lin, H.H.; YUAN-HUEI CHANG; HAO-HSIUNG LIN; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T03:50:07Z |
背靠背式雙波長半導體雷射元件
|
HAO-HSIUNG LIN; 洪儒菘; 林浩雄; 洪儒菘; 林浩雄 |
| 臺大學術典藏 |
2018-09-10T03:50:07Z |
集總常數補償式高低通平衡至不平衡轉換器
|
邱煥凱; 林浩雄; HAO-HSIUNG LIN; 邱煥凱; 林浩雄 |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
On the InAs(N)/InGaAs quantum wells
|
T. Y. Chu,; D. K. Shih,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
Cubic GaN grown on (001) GaAs substrate by RF plasma Assisted gas source MBE
|
L. W. Sung; H. H. Lin; C. T. Chia; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
Effect of growth interruptions on the interfaces of GaAsSb/GaAs Multiple Quantum Well
|
P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:04Z |
InAsN Grown by Plasma-assisted Gas Source MBE
|
HAO-HSIUNG LIN; T. R. Yang,; T. Y. Chu,; H. H. Lin,; D. K. Shih, |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
InAs0.97N0.03/InGaAs/InP multiple quantum well lasers with emission wavelength = 2.38m
|
Ding-Kang Shih,; H. H. Lin,; Y. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
High power In0.49Ga0.51P/ In0.15Ga0.85As heterostructure doped-channel FETs
|
H. C. Chiu; S. C. Yang; Y. J. Chan; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
(AlxGa1-x)0.5In0.5P/ In0.15Ga0.85As (x=0, 0.3, 1.0) heterostructure doped-channel FETs for microwave power applications
|
S. C. Yang; H. C. Chiu; Y.-J. Chan; H. H. Lin; J.-M. Kuo; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
Stranied InAsN/InGaAs/InP Multiple Quantum Well structures for Mid-Infrared Lasers Grown by GSMBE
|
D. K. Shih,; H. H. Lin,; Y. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:03Z |
Growth and Optical Characteristics of Type-II GaAsSb/GaAs Multiple Quantum well
|
M. H. Lee; P. W. Liu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:02Z |
Insulator-quantum Hall conductor transitions at low magnetic field
|
C. F. Huang,; Y. H. Chang,; C. H. Lee,; H. D. Yeh,; C.-T. Liang,; Y. F. Chen,; H. H. Lin,; H. H. Cheng,; G. J. Hwang,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:02Z |
Transport and optical studies of the D- -conduction band in doped GaAs/AlGaAs quantum wells
|
C. H. Lee,; Y. H. Chang,; C. F. Huang,; M. Y. Huang,; H. H. Lin,; C. P. Lee,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:02Z |
Optical properties of as-grown and annealed of InAs(N)/ InGaAsP multiple quantum wells
|
G. R. Chen,; H. H. Lin,; J. S. Wang,; D. K. Shih,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:50:02Z |
Growth of InAsN/ InGaAsP multiple quantum well on InP by gas source molecular beam epitaxy
|
J. S. Wang; H. H. Lin; L. W. Sung; G. R. Chen; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T03:43:38Z |
Blueshift of photoluminescence peak in ten periods InAs quantum dots superlattice
|
Lin, R.-M.;Lee, S.-C.;Lin, H.-H.;Dai, Y.-T.;Chen, Y.-F.; Lin, R.-M.; Lee, S.-C.; Lin, H.-H.; Dai, Y.-T.; Chen, Y.-F.; HAO-HSIUNG LIN; Lee, Si-Chen; YANG-FANG CHEN |
| 臺大學術典藏 |
2018-09-10T03:30:12Z |
Mechanism for photoluminescence in an InyAs1-yN/InxGa1-xAs single quantum well
|
Fan, J.C.; Hung, W.K.; Chen, Y.F.; Wang, J.S.; Lin, H.H.; Fan, J.C.; Hung, W.K.; Chen, Y.F.; Wang, J.S.; Lin, H.H.; HAO-HSIUNG LIN; JEN-CHEN FAN; YANG-FANG CHEN |
