| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001)
|
D. N. Talwar,;T. R. Yang,;H. H. Lin,;Z. C. Feng,; D. N. Talwar,; T. R. Yang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation
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K. I. Lin;K. L. Lin;B. W. Wang;H. H. Lin;J. S. Huang; K. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Raman characterization of primary and double twinning for (111)B GaAsSb grown on GaAs
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Y. R. Chen,;H. H. Lin; Y. R. Chen,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate
|
Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN; H. M. Wu,;Y. J. Yang,;H. H. Lin,; H. M. Wu, |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scattering
|
B. W. Wang,;C. J. Hong-Liao,;H. H. Lin,;Z. C. Feng,; B. W. Wang,; C. J. Hong-Liao,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
GaAsPSb and its application to heterojunction bipolar transistors
|
Y. C. Chin,;H. H. Lin,;H. S. Guo,;C. H. Huang,; Y. C. Chin,; H. H. Lin,; H. S. Guo,; C. H. Huang,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure
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Y. C. Chin,; H. S. Tsai,; H. H. Lin,; HAO-HSIUNG LIN; J. Y. Chen,;B. H. Chen,;Y. S. Huang,;Y. C. Chin,;H. S. Tsai,;H. H. Lin,; J. Y. Chen,; B. H. Chen,; Y. S. Huang, |
| 臺大學術典藏 |
2018-09-10T09:24:41Z |
A study on the p-InGaP layer of InGaP/InGaAs/Ge triple-junction solar cells
|
H. M. Wu;S. J. Tsai;H. I. Ho;H. H. Lin;Y. J. Yang; H. M. Wu; S. J. Tsai; H. I. Ho; H. H. Lin; Y. J. Yang; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:41Z |
Selective etching of InAsPSb and GaSb in HCl-H2O2-H2O solution
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S. H. Li;C. J. Wu;H. H. Lin; S. H. Li; C. J. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:41Z |
Slanted InAs nanowires gorwn by GSMBE
|
W. C. Chen,;L. H. Chen,;Y. T. Lin,;H. H. Lin,; W. C. Chen,; L. H. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:41Z |
Local environment study of dilute nitride GaAsSbN with X-ray absorption fine structure spectroscopy
|
C. L. Chiou,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN; C. L. Chiou,;Z. C. Feng,;H. H. Lin, |
| 臺大學術典藏 |
2018-09-10T09:24:40Z |
Structural properties of GaAsSb grown on GaAs
|
Y. R. Chen,;L. C. Chou,;Y. J. Yang,;H. H. Lin,; Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:40Z |
Study on the lattice structure of InAsPSb grown on GaAs
|
G. T. Chen,;C. J. Wu,;Z. C. Feng,;H. H. Lin,; G. T. Chen,; C. J. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:40Z |
Short range structure of dilute nitride GaAsSbN
|
H. H. Lin,;C. L. Chiou,;Y. T. Lin,;T. C. Ma,;J. S. Wu,;Z. C. Feng,; H. H. Lin,; C. L. Chiou,; Y. T. Lin,; T. C. Ma,; J. S. Wu,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:40Z |
Sb-based zincblende alloys with strong structural disorder
|
HAO-HSIUNG LIN; H. H. Lin; H. H. Lin |
| 臺大學術典藏 |
2018-09-10T09:24:40Z |
Defects probing by temperature dependence Raman scattering of GaAsSbN
|
J. Wu;Y. T. Lin;H. H. Lin; J. Wu; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy
|
Y. R. Chen,;L. C. Chou,;Y. J. Yang,;H. H. Lin,; Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Evidence of nitrogen reorganization in GaAsSbN alloys
|
H. P. Hsu;Y. T. Lin;H. H. Lin; H. P. Hsu; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
InGaP/GaAs0.57P0.28Sb0.15/GaAs double HBT with weakly type-II base/collector junction
|
Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Bond lengths and lattice structure of InP0.52Sb0.48 grown on GaAs
|
C. J. Wu;Z. C. Feng;W. M. Chang;C. C. Yang;H. H. Lin; C. J. Wu; Z. C. Feng; W. M. Chang; C. C. Yang; H. H. Lin; HAO-HSIUNG LIN; CHIH-CHUNG YANG |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Electron transport in a GaPSb film
|
S. T. Lo; H. E. Lin; S.-W. Wang; H. D. Lin; Y. C. Chin; H. H. Lin; J. C. Lin; C. T. Liang; S. T. Lo; H. E. Lin; S.-W. Wang; H. D. Lin; Y. C. Chin; H. H. Lin; J. C. Lin; C. T. Liang; CHI-TE LIANG; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Electronic and structureal properties of GaAs0.64P0.19Sb0.17 on GaAs
|
Y. C. Chin;J. Y. Chen;B. H. Chen;H. S. Tsai;Y. S. Huang;H. H. Lin; Y. C. Chin; J. Y. Chen; B. H. Chen; H. S. Tsai; Y. S. Huang; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:24:39Z |
Study on the structural properties of InP0.52Sb0.48 on GaAs
|
C. J. Wu,;G. T. Chen,;Z. C. Feng,;W. M. Chang,;C. C. Yang,;H. H. Lin,; C. J. Wu,; G. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:22:27Z |
Short channel effects on gallium nitride/gallium oxide nanowire transistors
|
Yu, J.-W.; Yeh, P.-C.; Wang, S.-L.; Wu, Y.-R.; Mao, M.-H.; Lin, H.-H.; Peng, L.-H.; MING-HUA MAO; HAO-HSIUNG LIN; LUNG-HAN PENG; YUH-RENN WU |
| 臺大學術典藏 |
2018-09-10T08:46:01Z |
Study on the short range structure of InP0.52Sb0.48 grown by gas-source molecular-beam epitaxy
|
C. J. Wu,; K. T. Chen,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN |
