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Showing items 96-120 of 292 (12 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T08:46:01Z |
Short range sturcure of GaAsSbN grown by plasma-assisted gas-source molecular-beam epitaxy
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Y. T. Lin,; J. S. Wu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:01Z |
X-ray absorption find structures of InPSb alloys
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C. J. Wu,; K. T. Chen,; Z. C. Feng,; W. M. Chang,; C. C. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Combination of thermodynamic model and precursor state for As and Sb incorporation behavior in GaAsSb/GaAs multiple-quantum wells
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J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Tetragonal distortion of InAsPSb film grown on InAs substrate studied by Rutherford backscattering/channeling and synchrotron X-ray diffraction
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F. Cheng,; T. Fa,; S. Yao,; C. J. Wu,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Preparation and characterization of p-type Fe2O3 pellets from Mg doping in pure oxygen atmosphere at high temperatures
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Y. W. Tai,; C. C. Yang,; M. H. Yang,; C. S. Hong,; H. H. Lin,; B. Z. Wan,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Orentation dependent phase separation in GaAsSb
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Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:46:00Z |
Structural properties of (111)B GaAsSb grown on GaAs substrates
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Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:45:59Z |
Raman scattering in InAsxSbyP1-x-y alloys grown by gas source MBE
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K. J. Cheetham,; A. Krier,; I. Patel,; J. S. Tzeng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:52Z |
Hetero-epitaxy of InAs on patterened Si (100) substrates
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Y. T. Lin;Y. R. Lin;C. H. Ko;C. H. Wann;H. H. Lin; Y. T. Lin; Y. R. Lin; C. H. Ko; C. H. Wann; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:52Z |
InAsPSb/InAs photodetectors grown by gas source molecular beam epitaxy
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C. J. Wu,;S. W. Lo,;H. H. Lin,; C. J. Wu,; S. W. Lo,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:52Z |
Synchrotron radiation X-ray absorption investigation of InAsPSb films on GaAs by molecular beam epitaxy
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Y. R. Lan,;C. J. Wu,;H. H. Lin,;L. Y. Chang,;Z. C. Feng,; Y. R. Lan,; C. J. Wu,; H. H. Lin,; L. Y. Chang,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:52Z |
環境光偵測器
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?L?E??;???j?v;?L????;???T??;??????; �L�E��; ���j�v; �L����; ���T��; ������; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:51Z |
Temperature dependent photoluminescence of InAsSb/InAsPSb multiple quantum well
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C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:51Z |
X-ray absorption fine-structure spectroscopy of InAsPSb grown by gas-source molecular-beam epitaxy
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C. J. Wu,;Y. R. Lan,;L. Y. Chang,;Z. C. Feng,;H. H. Lin,; C. J. Wu,; Y. R. Lan,; L. Y. Chang,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:51Z |
Raman scattering of heavily Si-doped InAs grown by moleculr beam epitaxy
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J. S. Tzeng,;C. J. Wu,;C. J. Hong-Liao,;H. H. Lin,; J. S. Tzeng,; C. J. Wu,; C. J. Hong-Liao,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Optical properties of As-rich InAsSb/InAsPSb multiple quantum well
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C. J. Wu,;G. Tsai,;H. H. Lin; C. J. Wu,; G. Tsai,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Raman scattering in InAsPSb quaternary alloys
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J. S. Tzeng,;C. J. Wu,;H. H. Lin,; J. S. Tzeng,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Investigation of InAsPSb/GaAs from molecular beam epitaxy by X-ray absorption fine-structure spectroscopy
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Y. R. Lan,;C. J. Wu,;H. H. Lin,;T. S. Chan,;Z. C. Feng,; Y. R. Lan,; C. J. Wu,; H. H. Lin,; T. S. Chan,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
The combination for thermodynamic model and precursor state used in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy
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J. M. Lin,;L. C. Chou,;H. H. Lin,; J. M. Lin,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:50Z |
Effects of plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE
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T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Optical study of GaAs1-xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy
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H. P. Hsu,;Y. S. Huang,;Y. T. Lin,;H. H. Lin,;K. K. Tiong,; H. P. Hsu,; Y. S. Huang,; Y. T. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Effects of different plasma species on the N incorporation of GaAsSbN grown by plasma-assisted GSMBE
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T. C. Ma;Y. T. Lin;H. H. Lin; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Low temperature annealing for GaAsSbN grown by gas-source molecular beam epitaxy
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Y. T. Lin,;T. C. Ma,;H. H. Lin; Y. T. Lin,; T. C. Ma,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:49Z |
Mid-infrared InAsPSb/InAs photodetectors grown by gas-source molecular beam epitaxy
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S. W. Lo,;C. J. Wu,;H. H. Lin,; S. W. Lo,; C. J. Wu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T08:17:48Z |
In0.46Ga0.54P0.98Sb0.02/GaAs: Its band offset and application to heterojunction bipolar transistor
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Y. C. Chin,;H. H. Lin,;C. H. Huang,;M. N. Tseng,; Y. C. Chin,; H. H. Lin,; C. H. Huang,; M. N. Tseng,; HAO-HSIUNG LIN |
Showing items 96-120 of 292 (12 Page(s) Totally)
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