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"huang ty"的相關文件
顯示項目 91-115 / 206 (共9頁)
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| 國立交通大學 |
2014-12-08T15:41:52Z |
Breakdown modes and their evolution in ultrathin gate oxide
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Lin, HC; Lee, DY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Electrical properties of metal-ferroelectric-insulator-semiconductor using sol-gel derived SrBi2Ta2O9 film and ultra-thin Si3N4 buffer layer
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Huang, CH; Tseng, TY; Chien, CH; Yang, MJ; Leu, CC; Chang, TC; Liu, PT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:38Z |
Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain
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Peng, DZ; Chang, TC; Shih, PS; Zan, HW; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:41:27Z |
Analysis of narrow width effects in polycrystalline silicon thin film transistors
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Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:41:22Z |
Room temperature two-terminal characteristics in silicon nanowires
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Hu, SF; Wong, WZ; Liu, SS; Wu, YC; Sung, CL; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:22Z |
Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors
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Lin, HC; Wang, MF; Lu, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:20Z |
High-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctions
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Lin, HC; Wang, MF; Hou, FJ; Lin, HN; Lu, CY; Liu, JT; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:10Z |
Fabrication and characterization of Schottky barrier polysilicon thin-film transistors with excimer-laser crystallized channel
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Yeh, KL; Lin, HC; Tsai, RW; Lee, MH; Huang, TY |
| 國立交通大學 |
2014-12-08T15:41:09Z |
Structure and thermal stability of MOCVD ZrO2 films on Si (100)
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Wu, X; Landheer, D; Graham, MJ; Chen, HW; Huang, TY; Chao, TS |
| 國立交通大學 |
2014-12-08T15:41:01Z |
Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxide
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Perng, TH; Chien, CH; Chen, CW; Lin, HC; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:40:56Z |
Low-pressure crystallization of sol-gel-derived PbZr0.52Ti0.48O3 thin films at low temperature for low-voltage operation
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Wang, DY; Chien, CH; Chang, CY; Leu, CC; Yang, JY; Chuang, SH; Huang, TY |
| 國立交通大學 |
2014-12-08T15:40:41Z |
Ultrathin zirconium silicate films deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2), Si(O(t)-Bu)(2)(thd)(2), and nitric oxide
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Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Kim, JK; Lennard, WN; Chao, TS |
| 國立交通大學 |
2014-12-08T15:40:35Z |
A study of parasitic resistance effects in thin-channel polycrystalline silicon TFTs with tungsten-clad source/drain
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Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:40:27Z |
High resolution x-ray micromachining using SU-8 resist
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Shew, BY; Hung, JT; Huang, TY; Liu, KP; Chou, CP |
| 國立交通大學 |
2014-12-08T15:40:23Z |
High-performance Pt/SrBi2Ta2O9/HfO2/Si structure for nondestructive readout memory
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Chien, CH; Wang, DY; Yang, MJ; Lehnen, P; Leu, CC; Chuang, SH; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:40:21Z |
The effects of dielectric type and thickness on the characteristics of dynamic threshold metal oxide semiconductor transistors
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Lee, YJ; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:40:05Z |
H-2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions
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Yu, CM; Lin, HC; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:39:55Z |
Short-channel poly-Si thin-film transistors with ultrathin channel and self-aligned tungsten-clad source/drain
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Zan, HW; Chang, TC; Shih, PS; Peng, DZ; Kuo, PY; Huang, TY; Chang, CY; Liu, PT |
| 國立交通大學 |
2014-12-08T15:39:42Z |
Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETs
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Lee, DY; Huang, TY; Lin, HC; Chiang, WJ; Huang, GW; Wanga, T |
| 國立交通大學 |
2014-12-08T15:39:39Z |
High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts
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Chao, TS; Lee, YJ; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:33Z |
Oxygen quenching effect in ultra-deep X-ray lithography with SU-8 resist
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Shew, BY; Huang, TY; Liu, KP; Chou, CP |
| 國立交通大學 |
2014-12-08T15:39:32Z |
A dual-gate-controlled single-electron transistor using self-aligned polysilicon sidewall spacer gates on silicon-on-insulator nanowire
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Hu, SF; Wu, YC; Sung, CL; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:25Z |
Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistors
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Chao, TS; Lee, YJ; Huang, CY; Lin, HC; Li, YM; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:17Z |
A new method to extract MOSFET threshold voltage, effective channel length, and channel mobility using S-parameter measurement
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Chen, HY; Chen, KM; Huang, GW; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:11Z |
Pooling spaces and non-adaptive pooling designs
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Huang, TY; Weng, CW |
顯示項目 91-115 / 206 (共9頁)
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