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| 臺大學術典藏 |
2020-06-11T06:12:08Z |
Strain reduction and crystal improvement of an InGaN/GaN quantum-well light-emitting diode on patterned Si (110) substrate
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Chen, C.-Y.;Hui Liu, Z.;Lin, C.-H.;Su, C.-Y.;Chang, T.-W.;Shih, P.-Y.;Chen, H.-S.;Liao, C.-H.;Hsieh, C.;Chou, W.-H.;Shen, C.-H.;Kiang, Y.-W.;Yang, C.C.; Chen, C.-Y.; Hui Liu, Z.; Lin, C.-H.; Su, C.-Y.; Chang, T.-W.; Shih, P.-Y.; Chen, H.-S.; Liao, C.-H.; Hsieh, C.; Chou, W.-H.; Shen, C.-H.; Kiang, Y.-W.; Yang, C.C.; YEAN-WOEI KIANG |
| 臺大學術典藏 |
2018-09-10T09:44:57Z |
Strain reduction and crystal improvement of an InGaN/GaN quantum-well light-emitting diode on patterned Si (110) substrate
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Hui Liu, Z.; Lin, C.-H.; Su, C.-Y.; Chang, T.-W.; Shih, P.-Y.; Chen, H.-S.; Liao, C.-H.; Hsieh, C.; Chou, W.-H.; Shen, C.-H.; Kiang, Y.-W.; Yang, C.C.; Chen, C.-Y.; CHIH-CHUNG YANGet al. |
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