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| 國立成功大學 |
2012-05-15 |
Growth of InN nanorods prepared by plasma-assisted molecular beam epitaxy with varying Cr thicknesses
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Liu, K. W.; Young, S. J.; Chang, S. J.; Hsueh, T. H.; Chen, Y. Z.; Chen, K. J.; Hung, H.; Wang, S. M.; Wu, Y. L. |
| 國立成功大學 |
2008 |
InGaN/GaN multiple-quantum-well LEDs with Si-doped barriers
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Hung, H.; Lam, K. T.; Chang, Shoou-Jinn; Chen, C. H.; Kuan, H.; Sun, Y. X. |
| 國立成功大學 |
2007-08 |
AlGaN MSM photodetectors with recess-etched LT-AlGaN cap layers
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Hung, H.; Chang, Shoou-Jinn; Lin, Y. C.; Kuan, H.; Lin, R. M. |
| 國立成功大學 |
2007-04 |
Effects of thermal annealing on In-induced metastable defects in InGaN films
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Hung, H.; Lam, Kin-Tak; Chang, Shoou-Jinn; Kuan, H.; Chen, Chin-Hsiang; Liaw, U. H. |
| 國立成功大學 |
2007-01 |
Kinetics of persistent photoconductivity in InGaN epitaxial films grown by MOCVD
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Hung, H.; Chen, C. H.; Chang, Shoou-Jinn; Kuan, H.; Lin, R. M.; Liu, C. H. |
| 國立成功大學 |
2006-04 |
GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes
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Jhou, Y. D.; Chen, C. H.; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, Ping-Chuan; Chen, Po-Chang; Hung, H.; Yu, C. L.; Wang, S. M.; Wu, M. H. |
| 國立成功大學 |
2005-08 |
Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures
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Jhou, Y. D.; Chen, Chin-Hsing; Chuang, Ricky Wen-kuei; Chang, Shoou-Jinn; Su, Yan-Kuin; Chang, Ping-Chuan; Chen, Po-Chang; Hung, H.; Wang, S. M.; Yu, C. L. |
| 中山醫學大學 |
2005 |
Ornithine decarboxylase prevents methotrexate-induced apoptosis by reducing intracellular reactive oxygen species production.
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Huang, C; Hsu, P-; Hung, Y-; Liao Y-,; Liu C-,; Hour C-,; Kao M-,; Tsay, GJ; Hung H-,; Liu, GY |
| 國立成功大學 |
2003-12 |
Nitride-based LEDs with p-InGaN capping layer
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Chang, Shoou-Jinn; Chen, C. H.; Chang, Ping-Chuan; Su, Yan-Kuin; Chen, Ping-Cheng; Jhou, Y. D.; Hung, H.; Wang, S. M.; Huang, Bohr-Ran |
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