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Showing items 91-100 of 110  (11 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T03:44:50Z Effect of oxide resistance on the characterization of interface trap density in MOS structures Lin, J.-J.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T03:44:49Z Improvement in oxide thickness uniformity by repeated spike oxidation Hong, C.-C.; Lee, C.-Y.; Hsieh, Y.-L.; Liu, C.-C.; Fong, I.-K.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T03:44:49Z Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress Hong, C.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T03:44:49Z Application of anodization to reoxidize silicon nitride film Lin, Y.-P.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T03:44:49Z Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments Chang-Liao, K.-S.;Hwu, J.-G.; Chang-Liao, K.-S.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T03:44:48Z Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal Chen, Y.-C.; Lee, C.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T03:44:48Z Stress effect on the kinetics of silicon thermal oxidation Yen, J.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2011 Comprehensive study on negative capacitance effect observed in MOS(n) capacitors with ultrathin gate oxides Chang, S.-J.;Hwu, J.-G.; Chang, S.-J.; Hwu, J.-G.; JENN-GWO HWU
國立臺灣大學 2009 Effect of Tensile Stress on MOS Capacitors with Ultra-thin Gate Oxide Chen, H.L.; Lee, C.J.; Hwu, J.G.
國立臺灣大學 2009 Characteristics and Reliability of Hafnium Oxide Dielectric Stacks with Room Temperature Grown Interfacial Anodic Oxide Chang, C.-H.; Hwu, J.-G.

Showing items 91-100 of 110  (11 Page(s) Totally)
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