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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
臺大學術典藏 2020-06-11T06:42:10Z The device-perimeter dependency in the transient current of a metal-insulator-metal-insulator-semiconductor capacitor with anodic oxide films Liao, C.-S.;Hwu, J.-G.; Liao, C.-S.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2020-06-11T06:42:10Z Two capacitance states memory characteristic in metal–oxide–semiconductor structure controlled by an outer MOS-gate ring Li, H.-J.;Yang, C.-F.;Hwu, J.-G.; Li, H.-J.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2020-06-11T06:42:09Z Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation Lu, W.-S.;Chou, J.-S.;Lee, S.-C.;Hwu, J.-G.; Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2020-06-11T06:23:10Z Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation Lu, W.-S.;Chou, J.-S.;Lee, S.-C.;Hwu, J.-G.; Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; Hwu, J.-G.; SI-CHEN LEE
臺大學術典藏 2020-06-11T06:10:03Z Formation of single crystal si-nanowire by electric field self-redistribution effect in anodic oxidation for multilayer array application Tseng, P.-H.;Tian, W.-C.;Pan, S.C.;Hwu, J.-G.; Tseng, P.-H.; Tian, W.-C.; Pan, S.C.; Hwu, J.-G.; WEI-CHENG TIAN
臺大學術典藏 2020-01-13T08:20:48Z Stress effect on the kinetics of silicon thermal oxidation Yen, J. Y.;Hwu, J. G.Jia-Yush Yen; Yen, J. Y.; Hwu, J. G.; JIA-YUSH YEN
臺大學術典藏 2020-01-13T08:20:48Z Enhancement of silicon oxidation rate due to tensile mechanical stress Jia-Yush YenYen, J. Y.;Hwu, J. G.; Yen, J. Y.; Hwu, J. G.; JIA-YUSH YEN
臺大學術典藏 2020-01-13T08:20:47Z Effect of mechanical stress on characteristics of silicon thermal oxides Jia-Yush YenYen, J. Y.;Huang, C. H.;Hwu, J. G.; Yen, J. Y.; Huang, C. H.; Hwu, J. G.; JIA-YUSH YEN
臺大學術典藏 2018-09-10T14:54:17Z Effect of trapped electrons in ultrathin SiO2 on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitor Chen, T.-Y.;Hwu, J.-G.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU
臺大學術典藏 2018-09-10T14:54:17Z Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substrates Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU

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