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"hwu j g"的相關文件
顯示項目 6-15 / 110 (共11頁) 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
The device-perimeter dependency in the transient current of a metal-insulator-metal-insulator-semiconductor capacitor with anodic oxide films
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Liao, C.-S.;Hwu, J.-G.; Liao, C.-S.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:10Z |
Two capacitance states memory characteristic in metal–oxide–semiconductor structure controlled by an outer MOS-gate ring
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Li, H.-J.;Yang, C.-F.;Hwu, J.-G.; Li, H.-J.; Yang, C.-F.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:42:09Z |
Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation
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Lu, W.-S.;Chou, J.-S.;Lee, S.-C.;Hwu, J.-G.; Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2020-06-11T06:23:10Z |
Radiation hardness of fluorinated oxides prepared by Liquid phase deposition method following rapid thermal oxidation
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Lu, W.-S.;Chou, J.-S.;Lee, S.-C.;Hwu, J.-G.; Lu, W.-S.; Chou, J.-S.; Lee, S.-C.; Hwu, J.-G.; SI-CHEN LEE |
| 臺大學術典藏 |
2020-06-11T06:10:03Z |
Formation of single crystal si-nanowire by electric field self-redistribution effect in anodic oxidation for multilayer array application
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Tseng, P.-H.;Tian, W.-C.;Pan, S.C.;Hwu, J.-G.; Tseng, P.-H.; Tian, W.-C.; Pan, S.C.; Hwu, J.-G.; WEI-CHENG TIAN |
| 臺大學術典藏 |
2020-01-13T08:20:48Z |
Stress effect on the kinetics of silicon thermal oxidation
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Yen, J. Y.;Hwu, J. G.Jia-Yush Yen; Yen, J. Y.; Hwu, J. G.; JIA-YUSH YEN |
| 臺大學術典藏 |
2020-01-13T08:20:48Z |
Enhancement of silicon oxidation rate due to tensile mechanical stress
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Jia-Yush YenYen, J. Y.;Hwu, J. G.; Yen, J. Y.; Hwu, J. G.; JIA-YUSH YEN |
| 臺大學術典藏 |
2020-01-13T08:20:47Z |
Effect of mechanical stress on characteristics of silicon thermal oxides
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Jia-Yush YenYen, J. Y.;Huang, C. H.;Hwu, J. G.; Yen, J. Y.; Huang, C. H.; Hwu, J. G.; JIA-YUSH YEN |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Effect of trapped electrons in ultrathin SiO2 on the two-state inversion capacitance at varied frequencies of metal-oxide-semiconductor capacitor
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Chen, T.-Y.;Hwu, J.-G.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T14:54:17Z |
Corner induced non-uniform electric field effect on the electrical reliability of metal-oxide-semiconductor devices with non-planar substrates
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Tseng, P.-H.;Hwu, J.-G.; Tseng, P.-H.; Hwu, J.-G.; JENN-GWO HWU |
顯示項目 6-15 / 110 (共11頁) 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
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