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Showing items 36-45 of 110 (11 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Investigation of the two-state current conduction mechanism in high-kSiO 2 stacked dielectric with high bandgap 4H-SiC substrate
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Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Influence of residual ions and gases at Si/SiO2 interface in ultra-thin gate oxide
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JENN-GWO HWU; Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Chen, T.-Y.;Lu, H.-W.;Hwu, J.-G. |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Electrical characteristics and temperature response of Al 2O 3 gate dielectrics with and without nitric acid compensation
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Hwu, J.-G.; JENN-GWO HWU; Lin, C.-C.;Hwu, J.-G.; Lin, C.-C. |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Electrical characteristics analysis at "oxide flat-band voltage" for Al-SiO 2-Si capacitor
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Lu, H.-W.;Chen, T.-Y.;Hwu, J.-G.; Lu, H.-W.; Chen, T.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:17Z |
Comparison of the reliability of thin Al2O3 gate dielectrics prepared by in situ oxidation of sputtered aluminum in oxygen ambient with and without nitric acid compensation
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Lin, C.-C.;Hwu, J.-G.; Lin, C.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:16Z |
Two-state current conduction in high-k/SiO2 stacked dielectric with high bandgap 4H-SiC substrate
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Chiang, J.-C.;Hwu, J.-G.; Chiang, J.-C.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:36:16Z |
Photovoltaic characteristics of MOS structure with photo enhanced trap assist tunneling current by oxide etching
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Wang, C.-Y.;Lu, H.-W.;Hwu, J.-G.; Wang, C.-Y.; Lu, H.-W.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:09:41Z |
Characterization of stacked hafnium oxide (HfO2) /silicon dioxide (SiO2) metal-oxide-semiconductor tunneling temperature sensors
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Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:09:40Z |
Trench structure metal- oxide-semiconductor (MOS) solar cells with oxides prepared by anodization technique
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Wang, C.-Y.;Hwu, J.-G.; Wang, C.-Y.; Hwu, J.-G.; JENN-GWO HWU |
| 臺大學術典藏 |
2018-09-10T08:09:40Z |
Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure
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JENN-GWO HWU; Hwu, J.-G.; Chen, C.-H.; Chen, C.-H.;Hwu, J.-G. |
Showing items 36-45 of 110 (11 Page(s) Totally)
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