| 國立臺灣大學 |
1992 |
Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing
|
胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; Wu, Y. L. |
| 國立臺灣大學 |
1992 |
Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides
|
胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S. |
| 國立臺灣大學 |
1992 |
A Study of the Anneal Technique to Recover the Electrical Characteristics of the Packaged Mental-Oxide Semiconductor Field Effect Transistors Damaged by Co-60 Irradiation
|
胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S. |
| 國立臺灣大學 |
1992 |
Application of Irradiation-Then-Anneal Treatment on the Improvement of Oxide Properties in Metal-Oxide-Semiconductor Capacitors
|
Lin, J. J.; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1992 |
Dependence of Hot-Carrier and Radiation Hardness of Metal-Oxide-Semiconductor Capacitors on Initital Oxide Resistance Determined by Charge-Then-Decay Method
|
胡振國; Lin, J. J.; Lin, Kuen-Chyung; Hwu, Jenn-Gwo; Lin, J. J.; Lin, Kuen-Chyung |
| 國立臺灣大學 |
1992 |
Effect of Starting Oxide on Electrical Characteristics of Metal- Reoxidized Nitrided Oxide-Semiconductor Devices Prepared by Rapid Thermal Processes
|
胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S. |
| 國立臺灣大學 |
1992 |
Performace Prediction and Function Recovery of CMOS Circuits Damaged by Co-60 Irradiation
|
胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S. |
| 國立臺灣大學 |
1992 |
Role of Stree in Irradiation-Then-Anneal Technique Used for Improving Radiation Hardness of Meta-Insulator-Semiconductor Devices.
|
胡振國; Cahng-Liao, K. S.; Hwu, Jenn-Gwo; Cahng-Liao, K. S. |
| 臺大學術典藏 |
1992 |
Effect of Fast Pulling the Starting Oxide Out of Furnace on the Radiation Hardness of MOS Capacitors with Reoxidixed-Nitrided Oxides
|
Wu, Y. L.; Hwu, Jenn-Gwo; 胡振國; Wu, Y. L.; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1992 |
Improvement in Surface Cleaning of Oxides by Rapid Thermal Annealing
|
Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J.; 胡振國; Lin, J. J.; Wu, Y. L.; Hwu, Jenn-Gwo; Lin, J. J. |
| 臺大學術典藏 |
1992 |
Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides
|
Lu, W. S.; Hwu, Jenn-Gwo; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1991 |
Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments
|
Chang-Liao, Kuei-Shu; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1991 |
Effect of oxide resistance on the characterization of interface trap density in MOS structures
|
Lin, Jing-Jenn; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1991 |
Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.
|
胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 國立臺灣大學 |
1991 |
Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments
|
Chang-Liao, K. S.; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1991 |
Radiation Reliability of Devices Used in Optical Fiber Communication
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1991 |
Studies of the Radiation Hard Fabrication Process of MOS Devices and the Radiation Stability of MOS Circuits
|
胡振國; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1991 |
Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.
|
Hwu, Jenn-Gwo; Lin, J. J.; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 臺大學術典藏 |
1991 |
Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments
|
Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1991 |
Radiation Reliability of Devices Used in Optical Fiber Communication
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1990-07 |
Oxide Resistance Characterization in MOS structures by the Voltage Decay Method
|
Hwu, Jenn-Gwo; Ho, I-Hsiu |
| 臺大學術典藏 |
1990-07 |
Oxide Resistance Characterization in MOS structures by the Voltage Decay Method
|
Hwu, Jenn-Gwo; Ho, I-Hsiu; Hwu, Jenn-Gwo; Ho, I-Hsiu |
| 國立臺灣大學 |
1990 |
Resistance-dependent field effect on the radiation behavior of MOS capacitors examined by instantaneous-terminal-voltage technique
|
Hwu, Jenn-Gwo; Fu, Shyh-Liang |
| 國立臺灣大學 |
1990 |
Thin-oxide thickness measurement in ellipsometry by a wafer rotation method
|
Hwu, Jenn-Gwo; Ho, I.-Hsiu; Chou, Shou-Pin |
| 國立臺灣大學 |
1990 |
A Study of the Leakage Property of Thin Gate Oxides
|
胡振國; Hwu, Jenn-Gwo |
