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教育部委託研究計畫 計畫執行:國立臺灣大學圖書館
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"hwu jenn gwo"的相關文件
顯示項目 151-160 / 210 (共21頁)
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| 臺大學術典藏 |
1992 |
Radiation Pardness of Rapid Thermal Reoxidized Nitrided Gate Oxides
|
Lu, W. S.; Hwu, Jenn-Gwo; 胡振國; Lu, W. S.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1991 |
Improvement of hot-carrier resistance and radiation hardness of nMOSFETs by irradiation-then-anneal treatments
|
Chang-Liao, Kuei-Shu; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1991 |
Effect of oxide resistance on the characterization of interface trap density in MOS structures
|
Lin, Jing-Jenn; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1991 |
Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.
|
胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 國立臺灣大學 |
1991 |
Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments
|
Chang-Liao, K. S.; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1991 |
Radiation Reliability of Devices Used in Optical Fiber Communication
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1991 |
Studies of the Radiation Hard Fabrication Process of MOS Devices and the Radiation Stability of MOS Circuits
|
胡振國; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1991 |
Gate Area and Dose Effects on the Characerization of Oxide Radiation Hardness and Hot-Electron Resistance of MOS Devices by Repeated Irradiation-Then-Anneal Treatments.
|
Hwu, Jenn-Gwo; Lin, J. J.; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 臺大學術典藏 |
1991 |
Improvement of Radiation Induced Degratation in Metal-Oxide-Nitride- Oxide-Semiconductor (MONOS) Devices by Repeated Irradiation-Then-Anneal Treatments
|
Chang-Liao, K. S.; Hwu, Jenn-Gwo; Chang-Liao, K. S.; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1991 |
Radiation Reliability of Devices Used in Optical Fiber Communication
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
顯示項目 151-160 / 210 (共21頁)
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