| 國立臺灣大學 |
1990 |
Improvement of Oxide Leakage Currents in MOS Structures by Postirradiation Annealing
|
胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 國立臺灣大學 |
1990 |
Resistance-Dependence Field Effect on the Radiation Behavor of MOS Capacitors Determined by Instantaneous-Terminal-Voltage Technique
|
胡振國; Fu, S. L.; Hwu, Jenn-Gwo; Fu, S. L. |
| 國立臺灣大學 |
1990 |
Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments
|
胡振國; Lin, J. J.; Hwu, Jenn-Gwo; Lin, J. J. |
| 國立臺灣大學 |
1990 |
Thin Oxide Thickness Measurement in Ellipsometry by a Wafer Rotation Method
|
胡振國; Ho, I. H.; Chou, S. P.; Hwu, Jenn-Gwo; Ho, I. H.; Chou, S. P. |
| 臺大學術典藏 |
1990 |
Dramatic Reduction of the Gate Oxide Leakage Currents in MOS Structures by Irradiation-Then-Anneal Treatments
|
Lin, J. J.; Hwu, Jenn-Gwo; 胡振國; Lin, J. J.; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1990 |
A Study of the Leakage Property of Thin Gate Oxides
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1990 |
Characterization Si02 by DC Resistance Measurement Tehcnique
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1990 |
Improvement in the Interface Property of Thin Gate Oxide by Successive Irradiation-Then-Anneal Treatments
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1990 |
Improvement of Hot Carrier Resistance in n-MOSFETs by Irradiation-Then- Anneal Treatments
|
Chang-Liao, K. S.; Hwu, Jenn-Gwo; 胡振國; Chang-Liao, K. S.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1989 |
Reliable C-V Characterization of MOS Capacitors by Initial Treatment at the Presence of Slow Interface States
|
胡振國; Lin, J. J.; 王維新; Hwu, Jenn-Gwo; Lin, J. J.; Wang, Way-Seen |
| 國立臺灣大學 |
1989 |
Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments
|
Hwu, Jenn-Gwo; Fu, Shyh-Liang |
| 國立臺灣大學 |
1989 |
A Study of the Radiation Effect on Tantalum Oxide Films
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1989 |
Comparison Between Charge-Temperature and Bias-Temperature Agings
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1989 |
Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior
|
胡振國; Lin, S. T.; Hwu, Jenn-Gwo; Lin, S. T. |
| 國立臺灣大學 |
1989 |
Flat-Band Annealing Behavior of Co-60 Irradiated Silicon MOS Capacitors
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1989 |
Constant Bias-Temperature and Constant Charge-Temperature Agings for Silicon Oxide Films of MOS Devices
|
胡振國; Chuang, J. B.; Fu, S. J.; Hwu, Jenn-Gwo; Chuang, J. B.; Fu, S. J. |
| 臺大學術典藏 |
1989 |
A Study of the Radiation Effect on Tantalum Oxide Films
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1989 |
Comparison Between Charge-Temperature and Bias-Temperature Agings
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1989 |
Examination of the Insulating Property of Ta205 in Al/Ta205/Si02/Si Capacitors from the Equivalent Low-Frequency Capacitance Behavior
|
Lin, S. T.; Hwu, Jenn-Gwo; 胡振國; Lin, S. T.; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
1989 |
Flat-Band Annealing Behavior of Co-60 Irradiated Silicon MOS Capacitors
|
Hwu, Jenn-Gwo; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1988 |
C-V Hysteresis Instability in Aluminum/Tantalum Oxide/Silicon Oxide/ Silicon Capacitors Due to Postmetallization Annealing and Co-60 Irradiation
|
胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1988 |
The Radiation Hardness Property of Dry Oxide Groun by Postoxidation Cooling in Oxygen Ambient
|
胡振國; Fu, S. S.; Hwu, Jenn-Gwo; Fu, S. S. |
| 國立臺灣大學 |
1987 |
Clockwise C-V Hysteresis Phenomena of Metal-Tantalum Oxide-Silicon-Oxide-Silicon(P) Capacitors Due to Leakage Current Through Tantalum Oxide
|
胡振國; Jeng, M. J.; 王維新; Tu, Y. K.; Hwu, Jenn-Gwo; Jeng, M. J.; Wang, Way-Seen; Tu, Y. K. |
| 國立臺灣大學 |
1987 |
Annealing and Radiation Effects on Al/Ta205/Si02/Si Capacitors
|
胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1987 |
Interface Properties of Al/Ta205/Si02/Si (P) Capacitor
|
胡振國; 王維新; Hwu, Jenn-Gwo; Wang, Way-Seen |
