| 國立臺灣大學 |
2008 |
Lateral Nonuniformity Effects of Border Traps on the Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors Subjected to High-Field Stresses
|
Tseng, Jen-Chou; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Silicon Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method
|
Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Effects of electrostatic discharge high-field current impulse on oxide breakdown
|
Tseng, Jen-Chou; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Low temperature (<400 ?C) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation
|
Chiang, Jung-Chin; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Modeling and Characterization of Hydrogen Induced Charge Loss in Nitride Trapping Memory
|
Yang, Yi-Lin; Chang, Chia-Hua; Shih, Yen-Hao; Hsieh, Kuang-Yeu; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Oxide-trapped charges induced by electrostatic discharge impulse stress
|
Tseng, Jen-Chou; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Analysis of Constitution and Characteristics of Lateral Nonuniformity Effects of MOS Devices Using QM-based Terman Method
|
Lin, Hao-Peng; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Reliability of Low Temperature Processing Hafnium Oxide Gate Dielectrics Prepared by Cost-effective Nitric Acid Oxidation (NAO) Technique
|
Chang, Chia-Hua; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Enhancement in Ultrathin Oxide Growth by Thermal-Induced Tensile Stress
|
Hung, Chien-Jui; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Impact of Strain-Temperature Stress on Ultrathin Oxide
|
Tung, Chia-Wei; Yang, Yi-Lin; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Lateral Nonuniformity of Effective Oxide Charges in MOS Capacitors With Al2O3 Gate Dielectrics
|
Huang, Szu-Wei; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Comparison of saturation current characteristics for ultrathin silicon oxides grown on n- and p-type silicon substrates simultaneously
|
Wang, Tsung-Miau; Chang, Chia-Hua; Chang, Shu-Jau; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Improvement in electrical characteristics of high-k Al2O3 gate dielectric by field-assisted nitric oxidation
|
Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Enhancement of Temperature Sensitivity for Metal–Oxide–Semiconductor (MOS) Tunneling Temperature Sensors by Utilizing Hafnium Oxide (HfO2) Film Added on Silicon Dioxide (SiO2)
|
Wang, Tsung-Miau; Chang, Chia-Hua; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2006 |
Indication of Lateral Nonuniformity of Effective Oxide Charges in High-k Gate Dielectrics by Terman’s Method
|
Hwu, Jenn-Gwo; Huang, Szu-Wei |
| 國立臺灣大學 |
2006 |
Quality Improvement and Electrical characteristics of High-k Films after Receiving Direct Superimposed with Alternative Current Anodic Oxidation (DAC-ANO) Compensation
|
Hwu, Jenn-Gwo; Chang, Chia-Hua; Wang, Tsung-Miau |
| 國立臺灣大學 |
2005 |
The effect of photon illumination in rapid thermal processing on the characteristics of MOS structures with ultra-thin oxides examined by substrate injection
|
Huang, Chia-Hong; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2005 |
Temperature-induced voltage drop rearrangement and its effect on oxide breakdown in metal-oxide-semiconductor capacitor structure
|
Wang, Tsung-Miau; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004-10 |
Quality Improvement of Ultrathin Gate Oxide by Using Thermal Growth Followed by SF ANO Technique
|
Yang, Yi-Lin; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
2004-10 |
Quality Improvement of Ultrathin Gate Oxide by Using Thermal Growth Followed by SF ANO Technique
|
Yang, Yi-Lin; Hwu, Jenn-Gwo; Yang, Yi-Lin; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
Electrical characteristics of ultra-thin gate oxides (<3 nm) prepared by direct current superimposed with alternating-current anodization
|
Chen, Zhi-Hao; Huang, Szu-Wei; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
Quality Improvement in LPCVD Silicon Nitrides by Anodic and Rapid Thermal Oxidations
|
Lin, Yen-Po; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing
|
Kuo, Chih-Sheng; Hsu, Jui-Feng; Huang, Szu-Wei; Lee, Lurng-Shehng; Tsai, Ming-Jinn; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
High Sensitive and Wide Detecting Range MOS Tunneling Temperature Sensors for On-Chip Temperature Detection
|
Shih, Yen-Hao; Lin, Shian-Ru; Wang, Tsung-Miau; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
Growth-Then-Anodization Technique for Reliable Ultrathin Gate Oxides
|
Liao, Wei-Jian; Yang, Yi-Lin; Chuang, Shun-Cheng; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
Ultrathin aluminum oxide gate dielectric on N-type 4H-SiC prepared by low thermal budget nitric acid oxidation
|
Huang, Szu-Wei; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
Suboxide Characteristics in Ultrathin Oxides Grown under Novel Oxidation Processes
|
Lin, Yen-Po; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2004 |
Oxide Thickness Dependent Suboxide Width and Its Effect on Inversion Tunneling Current
|
Lin, Yen-Po; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2003 |
Thermal Stress at Wafer Contact Points in Rapid Thermal Processing Investigated by Repeated Spike Treatment before Oxidation
|
Hong, Chao-Chi; Chang, Chang-Yun; Lee, Chaung-Yuan; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2003 |
Thickness-Dependent Stress Effect in P-type Metal-Oxide-Semiconductor Structure Investigated by Substrate Injection Current
|
Hong, Chao-Chi; Liao, Wei-Jian; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2003 |
Stress Distribution on (100) Si Wafer Mapped by Novel I-V Analysis of MOS Tunneling Diodes
|
Hong, Chao-Chi; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2003 |
Electrical Characterization and Process Control of Cost Effective High-k Aluminum Oxide Gate Dielectrics Prepared by Anodization Followed by Furnace Annealing
|
Huang, Szu-Wei; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2003 |
Using Anodization to Oxidize Ultrathin Aluminum Film for High-k Gate Dielectric Application
|
Lin, Yen-Po; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2002-01 |
Reduction in Leakage Current of Low-Temperature Thin-Gate Oxide by Repeated Spike Oxidation Technique
|
Hong, Chao-Chi; Chang, Chang-Yun; Lee, Chaung-Yuan; Hwu, Jenn-Gwo |
| 臺大學術典藏 |
2002-01 |
Reduction in Leakage Current of Low-Temperature Thin-Gate Oxide by Repeated Spike Oxidation Technique
|
Hong, Chao-Chi; Chang, Chang-Yun; Lee, Chaung-Yuan; Hwu, Jenn-Gwo; Hong, Chao-Chi; Chang, Chang-Yun; Lee, Chaung-Yuan; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2002 |
Ultralow leakage characteristics of ultrathin gate oxides (~3 nm) prepared by anodization followed by high-temperature annealing
|
Ting, Chieh-Chih; Shih, Yen-Hao; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2002 |
Local Thinning-Induced Oxide Nonuniformity Effect on the Tunneling Current of Ultrathin Gate Oxide
|
Hong, Chao-Chi; Chen, Wei-Ren; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2002 |
Effect of Mechanical Stress on Characteristics of Silicon Thermal Oxides
|
Yen, Jui-Yuan; Huang, Chia-Hong; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2002 |
Improvement in Ultrathin Rapid Thermal Oxide Uniformity by the Control of Gas Flow
|
Hong, Chao-Chi; Yen, Yuh-Ren; Su, Jiann-Liang; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2002 |
Improvement of oxide thickness uniformity by high then low O2 pressure oxidation in rapid thermal processing
|
Hong, Chao-Chi; Chen, Jenn-Long; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2002 |
Enhanced thermally induced stress effect on an ultrathin gate oxide
|
Su, Jiann-Liang; Hong, Chao-Chi; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2002 |
Silicon Metal-Oxide-Semiconductor Solar Cells with Oxide Prepared by Room Temperature Anodization in Hydrofluosilicic Acid Solution
|
Chen, Chih-Hao; Hong, Chao-Chi; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2001-10 |
Novel ultra thin gate oxide growth technique by alternating current anodization
|
Hwu, Jenn-Gwo; Lee, Chuang-Yuan; Ting, Chieh-Chih; Chen, Wei-Len |
| 臺大學術典藏 |
2001-10 |
Novel ultra thin gate oxide growth technique by alternating current anodization
|
Hwu, Jenn-Gwo; Lee, Chuang-Yuan; Ting, Chieh-Chih; Chen, Wei-Len; Hwu, Jenn-Gwo; Lee, Chuang-Yuan; Ting, Chieh-Chih; Chen, Wei-Len |
| 國立臺灣大學 |
2001 |
Ultra-thin gate oxides prepared by alternating current anodization of silicon followed by rapid thermal anneal
|
Chen, Yung-Chieh; Lee, Chuang-Yuan; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2001 |
Stress Effect on the Kinetics of Silicon Thermal Oxidation
|
Yen, Jui-Yuan; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2001 |
Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (~2 nm) after high-field stress
|
Huang, Chia-Hong; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2001 |
An on-Chip Temperature Sensor by Utilizing a MOS Tunneling Diode
|
Shih, Yen-Hao; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2001 |
Improvement in oxide thickness uniformity by repeated spikeoxidation
|
Hong, Chao-Chi; Lee, Chuang-Yuan; Hsieh, Yuan-Long; Liu, Chean-Chung; Fong, I.-K.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2001 |
Breakdown characteristics of ultrathin gate oxides (<4 nm) in metal–oxide–semiconductor structure subjected to substrate injection
|
Huang, Chia-Hong; Hwu, Jenn-Gwo |
