| 國立臺灣大學 |
2001 |
Degradation in Metal-Oxide-Semiconductor Structure with Ultrathin Gate Oxide due to External Compressive Stress
|
Hong, Chao-Chi; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2001 |
Application of Anodization to Reoxidize Silicon Nitride Film
|
Lin, Yen-Po; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2000 |
Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing
|
Huang, Chia-Hong; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2000 |
Enhancement of Silicon Oxidation Rate due to Tensile Mechanical Stress
|
Yen, Jui-Yuan; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1999-08 |
The Effect of Patterned Susceptor on the Thickness Uniformity of Rapid Thermal Oxides
|
Lee, Kuo-Chung; Chang, Hong-Yuan; Chang, Hong; Hwu, Jenn-Gwo; Wung, Tzong-Shyan |
| 國立臺灣大學 |
1999 |
Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation
|
Yeh, Kuo-Lang; Jeng, Ming-Jer; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1999 |
Improvement in the electrical properties of thin gate oxides bychemical-assisted electron stressing followed by annealing (CAESA)
|
Shih, Yen-Hao; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1997-06 |
Analog maximum, median and minimum circuit
|
Liu, Shen-Iuan; Chen, Poki; Chen, Chin-Yang; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1996 |
Rapid thermal post-metallization annealing effect on thin gate oxides
|
Jeng, Ming-Jer; Lin, Huang-Shen; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1996 |
Application of irradiation-then-nitridation to improve the radiation hardness in MOS gate dielectrics
|
Lee, Kuo-Chung; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1996 |
Process control of rapid thermal N2O-annealed thin gate oxides
|
Huang, Yi-Zen; Lu, Wei-Shin; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1996 |
複合式半導體微型壓力感測計之研究(總計畫)
|
呂學士; 胡振國; 張培仁; Lu, Shey-Shi; Hwu, Jenn-Gwo; Chang, Pei-Zen |
| 國立臺灣大學 |
1995 |
Improvement in reliability of n-MOSFETs by using rapid thermal N2O-reoxidized nitrided gate oxides
|
Wu, You-Lin; Wu, Zhao-Yin; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1995 |
Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters
|
胡振國; Jeng, M. J.; Hwu, Jenn-Gwo; Jeng, M. J. |
| 國立臺灣大學 |
1995 |
Improvement in Reliability of n-MOSFETs by Using Rapid Thermal N20- Reoxidized Gate Oxides
|
胡振國; Wu, Y. L.; Wu, Z. Y.; Hwu, Jenn-Gwo; Wu, Y. L.; Wu, Z. Y. |
| 國立臺灣大學 |
1995 |
Radiation Hardness of Coplanar Submicron Gap Charge-Coupled Devices (CCD) with Rapid Thermal Nitrided Oxides
|
胡振國; Lee, K. C.; Hwu, Jenn-Gwo; Lee, K. C. |
| 臺大學術典藏 |
1995 |
Aspect Ratio Effect on the Radiation Hardness of CMOS Inverters
|
Hwu, Jenn-Gwo; Jeng, M. J.; 胡振國; Jeng, M. J.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1994-10 |
金氧半元件輻射效應及互補金氧半反相器中元件比之設計考慮
|
胡振國; 鄭明哲; Hwu, Jenn-Gwo; 鄭明哲 |
| 國立臺灣大學 |
1994 |
Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment
|
Lu, W. S.; 胡振國; Chou, J. S.; 李嗣涔; Lu, W. S.; Hwu, Jenn-Gwo; Chou, J. S.; Lee, Si-Chen |
| 國立臺灣大學 |
1994 |
Application of Irradiation-Then-Nitridation to the Improvement of Radiation Hardness in MOS Gate Dielectrics
|
Lee, K. C.; 胡振國; Lee, K. C.; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1994 |
Design and Fabrication of Basic Silicon MOS Digital Ciruits
|
胡振國; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
1994 |
Effect of Fluorine on the Radiation Hardness of Gate Oxides Prepared by Liquid Phase Deposition Following Rapid Thermal Oxidation
|
胡振國; Lu, W. S.; Hwu, Jenn-Gwo; Lu, W. S. |
| 國立臺灣大學 |
1994 |
Improvement in Radiation Hardness of n-MOSFET's with Gate Oxides Prepared by Multiple N20 Annealings
|
胡振國; Wu, Y. L.; Kuo, K. M.; Hwu, Jenn-Gwo; Wu, Y. L.; Kuo, K. M. |
| 國立臺灣大學 |
1994 |
Rapid Thermal Post-Metallization Annealing Effect on the Reliability of Thin Gate Oxides
|
胡振國; Jeng, M. J.; Lin, H. S.; Hwu, Jenn-Gwo; Jeng, M. J.; Lin, H. S. |
| 國立臺灣大學 |
1994 |
Stable Si MOS Devices with Oxynitride Gate Dielectrics
|
胡振國; Hwu, Jenn-Gwo |
