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Showing items 1-50 of 144  (3 Page(s) Totally)
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Institution Date Title Author
國立中山大學 2009 氮化鎵自旋電子元件之成長製造與分析 羅奕凱;蔡振凱; Ikai Lo;Jenn-Kai Tsai
國立中山大學 2009 高屏地區奈米科技核心設施服務計畫---中山大學( I ) 羅奕凱; 張鼎張; 曾百亨; 陳英忠; 黃吉川; Ikai Lo; Ting-Chang Chang; Bae-Heng Tsen; Ying-Chung Chen; Chi-Chuan Hwang
國立中山大學 2007 P-wave-enhanced spin field effect transistor and recent patents M.H. Gau;Ikai Lo;W.T. Wang;J.C. Chiang;M.C. Chou
國立中山大學 2007 Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures Ikai Lo;M.H. Gau;J.K. Tsai;Y.L. Chen;Z.J. Chang;W.T. Wang;J.C. Chiang;T. Aggerstam;S. Lourdudoss
國立中山大學 2007 Optical anisotropy in [hkil]-oriented wurtzite semiconductor quantum wells C.N. Chen;S.H. Chang;M.L. Hung;W.T. Wang;Jih-Chen Chiang;Ikai Lo;W.T. Wang;M.H. Gau;H.F. Kao;M.E. Lee
國立中山大學 2007 Effect of bulk inversion asymmetry on optical transitions of zincblende semiconductor quantum wells C.N. Chen;M.E. Lee;Jih-Chen Chiang;Ikai Lo;W.T. Wang;M.H. Gau;H.F. Kao
國立中山大學 2007 Dresselhaus effect in bulk wurtzite structures Wan-Tsang Wang;C.L. Wu;S.F. Tsay;M.H. Gau;Ikai Lo;H.F. Kao;D.J. Jang;Jih-Chen Chiang;Meng-En Lee;Yia-Chung Chang;Chun-Nan Chen
國立中山大學 2006 Magnetotransport study on the defect levels of delta-doped In0.22Ga0.78As/GaAs quantum wells Ikai Lo;J.R. Lian;H.Y. Wang;M.H. Gau;J.K. Tsai;Jih-Chen Chiang;Y.J. Li;W.C. Hsu
國立中山大學 2006 Reply to Comments on “Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures” Ikai Lo;J.K. Tsai;W.J. Yao;P.C. Ho;Li-Wei Tu;T.C. Chang;S. Elhamri;W.C. Mitchel;K.Y. Hsieh;J.H. Huang;H.L. Huang;W.C. Tsai
國立中山大學 2006 Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect Ikai Lo;J.K. Tsai;M.H. Gau;Y.L. Chen;Z.J. Chang;W.T. Wang;J.C. Chiang;K.R. Wang;Chun-Nan Chen;T. Aggerstam;S. Loudordoss
國立中山大學 2006 Gate-controlled spin splitting in GaN/AlN quantum wells Ikai Lo;W.T. Wang;M.H. Gao;J.K. Tsai;S.F. Tsay;J.C. Chiang
國立中山大學 2006 Study of two-subband population in Fe-doped AlxGa1-xN/GaN heterostructures by persistent photoconductivity effect Ikai Lo;J.K. Tsai;M.H. Gau;Y.L. Chen;Z.J. Chang;W.T. Wang;Jih-Chen Chiang;K.R. Wang;Chun-Nan Chen;T. Aggerstam
國立中山大學 2006 Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect C.N. Chen;S.H. Chang;M.L. Hung;Jih-Chen Chiang;Ikai Lo;W.T. Wang;M.H. Gau;H.F. Kao;M.E. Lee
國立中山大學 2006 k.p Hamitonian for wurtzite semicondutor W.T. Wang;Ikai Lo;M.H. Gau;S.F. Tsay;Jih-Chen Chiang
國立中山大學 2006 Gate-controlled Spin Splitting in GaN/AlN Quantum Wells Ikai Lo;W.T. Wang;M.H. Gau;S.F. Tsay;Jih-Chen Chiang
國立中山大學 2006 Giant optical anisotropy in M-plane GaN/AlGaN quantum wells due to crystal-field effect C.N. Chen;S.H. Chang;M.L. Hung;Jih-Chen Chiang;Ikai Lo;W.T. Wang;M.H. Gau;H.F. Kao;M.E. Lee
國立中山大學 2006 Optical anisotropy in [hkil]-oriented wurtzite semiconductor quantum wells C.N. Chen;S.H. Chang;M.L. Hung;Jih-Chen Chiang;Ikai Lo;W.T. Wang;M.H. Gau;H.F. Kao;M.E. Lee
國立中山大學 2006 Anomalous k-dependent spin splitting in wurtzite AlxGa1-xN/GaN heterostructures Ikai Lo;M.H. Gau;J.K. Tsai;Y.L. Chen;Z.J. Chang;W.T. Wang;Jih-Chen Chiang;T. Aggerstam
國立中山大學 2006 Gate-Controlled Spin Splitting in GaN/AlN Quantum Wells Ikai Lo;W.T. Wang;M.H. Gau;J.K. Tsai;S.F. Tsay;J.C. Chiang
國立中山大學 2005 Zero-field spin-splitting in modulation doped AlxGa1-xN/GaN two-dimensional electron system K.S. Cho;Tsai-Yu Huang;Hong-Syuan Wang;Ming-Gu Lin;Tse-Ming Chen;C.T. Liang;Y.F. Chen;Ikai Lo
國立中山大學 2005 Wurtzite structure effects on the spin splitting of GaN/AlN quantum wells Ikai Lo;W.T. Wang;M.H. Gao;S.F. Tsay;J.C. Chiang
國立中山大學 2005 Wurtzite Effects on Spin Splitting of GaN/AlN Quantum Wells Ikai Lo;W.T. Wang;M.H. Gau;S.F. Tsay;Jih-Chen Chiang
國立中山大學 2005 Wurtzite structure Effects on Spin Splitting in GaN/AlN Quantum Wells Ikai Lo;W.T. Wang;M.H. Gau;S.F. Tsay;J.C. Chiang
國立中山大學 2005 氮基三五族半導體奈米結構(II) 杜立偉;劉全璞;蔡民雄;羅奕凱; Li-Wei Tu;Chuan-Pu Liu;Mim-Hsiung Tsai;Ikai Lo
國立中山大學 2004 Effect of N and Ga flux ratio on the GaN surface morphologies grown at high temperature by plasma-assisted molecular beam epitaxy J.K. Tsai;Ikai Lo;K.L. Chuang;L.W. Tu;J.H. Huang;C.H. Hsieh;K.Y. Hsieh
國立中山大學 2004 Exchange-enhanced g-factors in an Al0.25Ga0.75N/GaN two-dimensional electron system K.S. Cho;Tsai-Yu Huang;Chao-Ping Huang;Yi-Hsing Chiu;C.T. Liang;Y.F. Chen;Ikai Lo
國立中山大學 2004 Indium-facilitated growth and characterization of N-polar GaN by RF plasma-assisted molecular beam epitaxy J.H. Huang;K.Y. Hsieh;J.K. Tsai;H.L. Huang;C.H. Hsieh;Y.C. Lee;K.L. Chuang;Ikai Lo;L.W. Tu
國立中山大學 2004 Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel Yih-Juan Li;Wei-Chou Hsu;I-Liang Chen;Ching-Sung Lee;Yeong-Jia Chen;Ikai Lo
國立中山大學 2004 氮基三五族半導體奈米結構(I) 杜立偉;羅奕凱;蔡民雄;劉全璞; Li-Wei Tu;Ikai Lo;Mim-Hsiung Tsai;Chuan-Pu Liu
國立中山大學 2003 Second subband population of two-dimensional electron gas in strongly coupled GaAs/Al0.3Ga0.7As double quantum wells Ikai Lo;J.K. Tsai;P.C. Ho;W.J. Yao;C.H. Chang;J.C. Chiang;Li-Wei Tu;Q.X. Zhao
國立中山大學 2003 Self-assembled vertical GaN nanorods grown by molecular beam epitaxy L.W. Tu;C.L. Hsiao;T.W. Chi;Ikai Lo;K.Y. Hsieh
國立中山大學 2003 Vertical hexagonal GaN nanorods grown on (111)Si substrate Ching-Lien Hsiao;Li-Wei Tu;T.W. Chi;Jamafon J. Wu;Kuang-Yu Hsieh;Ikai Lo
國立中山大學 2003 Second subband population of the two-dimensional electron gas in strongly coupled GaAs/Al0.3Ga0.7As double quantum wells Ikai Lo;J.K. Tsai;P.C. Ho;W.J. Yao;C.H. Chang;Jih-Chen Chiang;Li-Wei Tu;Q.X. Zhao
國立中山大學 2002 Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures Ikai Lo;J.K. Tsai;W.J. Yao;P.C. Ho;Li-Wei Tu;T.C. Chang;S. Elhamri;W.C. Mitchel;K.Y. Hsieh;J.H. Huang;H.L. Huang;W.C. Tsai
國立中山大學 2002 Plasma assisted MBE growth and characterizations of GaN Li-Wei Tu;K.H. Lee;C.M. Lai;M.K. Hsu;W.S. Chen;C.S. Liu;Ikai Lo;J.K. Tsai;P.C. Ho;K.Y. Hsieh;C.H. Huang;Y.L. Shen
國立中山大學 2002 Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures Ikai Lo;J.K. Tsai;Li-Wei Tu;K.Y. Hsieh;C.S. Liu;J.H. Huang;S. Elhamri;W.C. Mitchel;J.K. Sheu
國立中山大學 2002 Landau-level mixing effect in Ga1-xAlxAs/GaAs/Ga1-xAlxAs double-barrier resonant tunneling structures Jih-Chen Chiang;I-Min Jiang;Ikai Lo;Li-Wei Tu
國立中山大學 2002 Landau-level mixing effect in Ga1-xAlxAs-GaAs-Ga1-xAlxAs double-barrier Resonant tunneling structures Jih-Chen Chiang;I-Min Jiang;Ikai Lo;Li-Wei Tu
國立中山大學 2002 Wide bandgap semiconductor materials for device application using in space Ikai Lo;Li-Wei Tu;J.K. Tsai
國立中山大學 2002 Characteristics of GaN grown by RF-plasma enhanced molecular beam epitaxy L.M. Lai;K.H. Lee;W.S. Chen;C.S. Liu;Li-Wei Tu;Ikai Lo;C.H. Huang;Y.L. Shen;K.Y. Hsieh
國立中山大學 2002 The electronic properties of modulation-doped AlGaN/GaN heterostructures J.K. Tsai;W.J. Yao;P.C. Ho;Ikai Lo;Li-Wei Tu;T.C. Chang;W.C. Tsai
國立中山大學 2002 Piezoelectric Effect on Al0.35In0.65N/GaN Heterostructures J.K. Tasi;Ikai Lo;Li-Wei Tu;K.Y. Hsieh;M.H. Tsai;C.S. Liu;J.H. Huang
國立中山大學 2002 A study of GaN growth by Plasma Assisted Molecular Beam Epitaxy J.K. Tsai;W.J. Yao;K.H. Lee;P.C. Ho;Ikai Lo;Li-Wei Tu;K.Y. Hsieh
國立中山大學 2002 寬能隙半導體氮化鎵電子特性之研究(III) 羅奕凱; Ikai Lo
國立中山大學 2001 Thermal effect on quantum confinement in ZnS0.06Se0.9-/Zn0.8Cd0.2Se quantum wells Ikai Lo;K.H. Lee;Li-Wei Tu;J.K. Tsai;W.C. Mitchel;R.C. Tu;Y.K. Su
國立中山大學 2001 Hybridization of two-dimensional electron-hole system in InAs/GaSb Quantum wells Ikai Lo;S.F. Tsay;J.C. Chiang;Y.C. Chang;Li-Wei Tu;W.C. Mitchel
國立中山大學 2001 Hybridization of A Two-dimensional Electron-hole System in InAs/GaSb Quantum Wells Ikai Lo;Shiow-Fon Tsay;Jih-Chen Chiang;Yen-Cheng Chang;Li-Wei Tu;W.C. Mitchel
國立中山大學 2001 Hybridazation of two-dimensional electron-hole system in InAs/GaSb Quantum Wells Ikai Lo;Shiow-Fon Tsay;Jih-Chen Chiang;Y.C. Chang;Li-Wei Tu
國立中山大學 2001 Electron-electron interaction of 2DEG in ZnSSe/ZnCdSe quantum wells Ikai Lo;Y.M. Liu;Li-Wei Tu;K.Y. Hsieh;W.C. Mitchel;R.C. Tu;Y.K. Su
國立中山大學 2001 Thermal effect on bandgap energy of quantum wells J.K. Tsai;Ikai Lo;K.H. Lee;Li-Wei Tu;Y.M. Liu;W.C. Mitchel;R.C. Tu;Y.K. Su

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