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"ikai lo"

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Institution	Date	Title	Author
國立中山大學	2005	Wurtzite structure effects on the spin splitting of GaN/AlN quantum wells	Ikai Lo;W.T. Wang;M.H. Gao;S.F. Tsay;J.C. Chiang
國立中山大學	2005	Wurtzite Effects on Spin Splitting of GaN/AlN Quantum Wells	Ikai Lo;W.T. Wang;M.H. Gau;S.F. Tsay;Jih-Chen Chiang
國立中山大學	2005	Wurtzite structure Effects on Spin Splitting in GaN/AlN Quantum Wells	Ikai Lo;W.T. Wang;M.H. Gau;S.F. Tsay;J.C. Chiang
國立中山大學	2005	氮基三五族半導體奈米結構(II)	杜立偉;劉全璞;蔡民雄;羅奕凱; Li-Wei Tu;Chuan-Pu Liu;Mim-Hsiung Tsai;Ikai Lo
國立中山大學	2004	Effect of N and Ga flux ratio on the GaN surface morphologies grown at high temperature by plasma-assisted molecular beam epitaxy	J.K. Tsai;Ikai Lo;K.L. Chuang;L.W. Tu;J.H. Huang;C.H. Hsieh;K.Y. Hsieh
國立中山大學	2004	Exchange-enhanced g-factors in an Al0.25Ga0.75N/GaN two-dimensional electron system	K.S. Cho;Tsai-Yu Huang;Chao-Ping Huang;Yi-Hsing Chiu;C.T. Liang;Y.F. Chen;Ikai Lo
國立中山大學	2004	Indium-facilitated growth and characterization of N-polar GaN by RF plasma-assisted molecular beam epitaxy	J.H. Huang;K.Y. Hsieh;J.K. Tsai;H.L. Huang;C.H. Hsieh;Y.C. Lee;K.L. Chuang;Ikai Lo;L.W. Tu
國立中山大學	2004	Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel	Yih-Juan Li;Wei-Chou Hsu;I-Liang Chen;Ching-Sung Lee;Yeong-Jia Chen;Ikai Lo
國立中山大學	2004	氮基三五族半導體奈米結構(I)	杜立偉;羅奕凱;蔡民雄;劉全璞; Li-Wei Tu;Ikai Lo;Mim-Hsiung Tsai;Chuan-Pu Liu
國立中山大學	2003	Second subband population of two-dimensional electron gas in strongly coupled GaAs/Al0.3Ga0.7As double quantum wells	Ikai Lo;J.K. Tsai;P.C. Ho;W.J. Yao;C.H. Chang;J.C. Chiang;Li-Wei Tu;Q.X. Zhao
國立中山大學	2003	Self-assembled vertical GaN nanorods grown by molecular beam epitaxy	L.W. Tu;C.L. Hsiao;T.W. Chi;Ikai Lo;K.Y. Hsieh
國立中山大學	2003	Vertical hexagonal GaN nanorods grown on (111)Si substrate	Ching-Lien Hsiao;Li-Wei Tu;T.W. Chi;Jamafon J. Wu;Kuang-Yu Hsieh;Ikai Lo
國立中山大學	2003	Second subband population of the two-dimensional electron gas in strongly coupled GaAs/Al0.3Ga0.7As double quantum wells	Ikai Lo;J.K. Tsai;P.C. Ho;W.J. Yao;C.H. Chang;Jih-Chen Chiang;Li-Wei Tu;Q.X. Zhao
國立中山大學	2002	Spin splitting in modulation-doped AlxGa1-xN/GaN heterostructures	Ikai Lo;J.K. Tsai;W.J. Yao;P.C. Ho;Li-Wei Tu;T.C. Chang;S. Elhamri;W.C. Mitchel;K.Y. Hsieh;J.H. Huang;H.L. Huang;W.C. Tsai
國立中山大學	2002	Plasma assisted MBE growth and characterizations of GaN	Li-Wei Tu;K.H. Lee;C.M. Lai;M.K. Hsu;W.S. Chen;C.S. Liu;Ikai Lo;J.K. Tsai;P.C. Ho;K.Y. Hsieh;C.H. Huang;Y.L. Shen
國立中山大學	2002	Piezoelectric effect on Al0.35-δInδGa0.65N/GaN heterostructures	Ikai Lo;J.K. Tsai;Li-Wei Tu;K.Y. Hsieh;C.S. Liu;J.H. Huang;S. Elhamri;W.C. Mitchel;J.K. Sheu
國立中山大學	2002	Landau-level mixing effect in Ga1-xAlxAs/GaAs/Ga1-xAlxAs double-barrier resonant tunneling structures	Jih-Chen Chiang;I-Min Jiang;Ikai Lo;Li-Wei Tu
國立中山大學	2002	Landau-level mixing effect in Ga1-xAlxAs-GaAs-Ga1-xAlxAs double-barrier Resonant tunneling structures	Jih-Chen Chiang;I-Min Jiang;Ikai Lo;Li-Wei Tu
國立中山大學	2002	Wide bandgap semiconductor materials for device application using in space	Ikai Lo;Li-Wei Tu;J.K. Tsai
國立中山大學	2002	Characteristics of GaN grown by RF-plasma enhanced molecular beam epitaxy	L.M. Lai;K.H. Lee;W.S. Chen;C.S. Liu;Li-Wei Tu;Ikai Lo;C.H. Huang;Y.L. Shen;K.Y. Hsieh
國立中山大學	2002	The electronic properties of modulation-doped AlGaN/GaN heterostructures	J.K. Tsai;W.J. Yao;P.C. Ho;Ikai Lo;Li-Wei Tu;T.C. Chang;W.C. Tsai
國立中山大學	2002	Piezoelectric Effect on Al0.35In0.65N/GaN Heterostructures	J.K. Tasi;Ikai Lo;Li-Wei Tu;K.Y. Hsieh;M.H. Tsai;C.S. Liu;J.H. Huang
國立中山大學	2002	A study of GaN growth by Plasma Assisted Molecular Beam Epitaxy	J.K. Tsai;W.J. Yao;K.H. Lee;P.C. Ho;Ikai Lo;Li-Wei Tu;K.Y. Hsieh
國立中山大學	2002	寬能隙半導體氮化鎵電子特性之研究(III)	羅奕凱; Ikai Lo
國立中山大學	2001	Thermal effect on quantum confinement in ZnS0.06Se0.9-/Zn0.8Cd0.2Se quantum wells	Ikai Lo;K.H. Lee;Li-Wei Tu;J.K. Tsai;W.C. Mitchel;R.C. Tu;Y.K. Su

Showing items 21-45 of 144 (6 Page(s) Totally)
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