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機構	日期	題名	作者
臺大學術典藏	2018-09-10T09:50:25Z	Novel Power Consumption Reduction strategy Using Mixed-Vth Cells for Optimizaing the Cells on Critical Paths for Low-Power SOC	G. Lin;J. B. Kuo; G. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T09:50:25Z	Novel Power Consumption Reduction strategy Using Mixed-Vth Cells for Optimizaing the Cells on Critical Paths for Low-Power SOC	G. Lin;J. B. Kuo; G. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T09:50:25Z	Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect	D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO; D. H. Lung;J. B. Kuo;D. Chen
臺大學術典藏	2018-09-10T09:50:25Z	Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect	D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO; D. H. Lung;J. B. Kuo;D. Chen
臺大學術典藏	2018-09-10T09:50:25Z	Modeling Advanced PD SOI CMOS Devices	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T09:50:25Z	Modeling Advanced PD SOI CMOS Devices	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T09:50:25Z	Back-Gate Bias Effect of PD SOI NMOS Device Considering BJT	D. H. Lung;J. B. Kuo; D. H. Lung; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T09:50:25Z	Back-Gate Bias Effect of PD SOI NMOS Device Considering BJT	D. H. Lung;J. B. Kuo; D. H. Lung; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T09:50:25Z	Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary	L. L. Wang;J. B. Kuo;S. Zhang; L. L. Wang; J. B. Kuo; S. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:50:25Z	Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary	L. L. Wang;J. B. Kuo;S. Zhang; L. L. Wang; J. B. Kuo; S. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:49Z	Compact Modeling of SOI CMOS Devices	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:49Z	Compact Modeling of SOI CMOS Devices	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:49Z	Grain-Boundary Impact Ionization-Induced Current Hump Effects of Polysilicon TFTs	S. Zhang; JAMES-B KUO; J. B. Kuo; T. C. Liu;J. B. Kuo;S. Zhang; T. C. Liu
臺大學術典藏	2018-09-10T09:24:49Z	Grain-Boundary Impact Ionization-Induced Current Hump Effects of Polysilicon TFTs	S. Zhang; JAMES-B KUO; J. B. Kuo; T. C. Liu;J. B. Kuo;S. Zhang; T. C. Liu
臺大學術典藏	2018-09-10T09:24:49Z	Grain Boundary-Related Kink Effects of Poly-Si TFTs	T. C. Liu;J. B. Kuo; T. C. Liu; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:49Z	Grain Boundary-Related Kink Effects of Poly-Si TFTs	T. C. Liu;J. B. Kuo; T. C. Liu; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:49Z	Modeling Hot-Carrier-Induced Reliability of Poly-silicon Thin Film Transistors	L. L. Wang;J. B. Kuo;S. Zhang; L. L. Wang; J. B. Kuo; S. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:49Z	Modeling Hot-Carrier-Induced Reliability of Poly-silicon Thin Film Transistors	L. L. Wang;J. B. Kuo;S. Zhang; L. L. Wang; J. B. Kuo; S. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:48Z	Foating-Body Kink-Effect Related Parasitic Bipolar Transistor Behavior in Poly-Si TFT	T. C. Liu;J. B. Kuo;S. D. Zhang; T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:48Z	Foating-Body Kink-Effect Related Parasitic Bipolar Transistor Behavior in Poly-Si TFT	T. C. Liu;J. B. Kuo;S. D. Zhang; T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:48Z	Turn-off Transient Behavior of 40nm PD SOI NMOS Device Considering the Floating Body Effect	S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:48Z	Floating-Body Kink Effect: Ply-Si TFT versus SOI CMOS	T. C. Liu;J. B. Kuo;S. D. Zhang; T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:48Z	Floating-Body Kink Effect: Ply-Si TFT versus SOI CMOS	T. C. Liu;J. B. Kuo;S. D. Zhang; T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:48Z	Design of Distortionless Interconnects via Main/auxiliary Structure with LC Line for High Speed On-chip Transmission	T. C. Liu;J. B. Kuo;S. D. Zhang; T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T09:24:48Z	Design of Distortionless Interconnects via Main/auxiliary Structure with LC Line for High Speed On-chip Transmission	T. C. Liu;J. B. Kuo;S. D. Zhang; T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:16Z	Modeling the Floating-Body-Effect-Related Transient Behavior of 40nm PD SOI NMOS Device via the SPICE Bipolar/MOS Model	S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:16Z	A Novel Low-Voltage Silicon-On-Insulator (SOI) CMOS Complementary Pass-Transistor Logic (CPL) Circuit using Asymmetrical Dynamic Threshold Pass-Transistor (ADTPT) Technique	J. B. Kuo;B. T. Wang; J. B. Kuo; B. T. Wang; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:16Z	A Novel Low-Voltage Silicon-On-Insulator (SOI) CMOS Complementary Pass-Transistor Logic (CPL) Circuit using Asymmetrical Dynamic Threshold Pass-Transistor (ADTPT) Technique	J. B. Kuo;B. T. Wang; J. B. Kuo; B. T. Wang; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:16Z	A Charge-Sharing-Problem-Free 1.5V BiCMOS Dynamic Logic Gate Circuit	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:16Z	A Charge-Sharing-Problem-Free 1.5V BiCMOS Dynamic Logic Gate Circuit	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:15Z	Analysis of Turn-off Transient Behavior of the 40nm PD SOI NMOS Device with the Floating Body Effect	C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach	J. S. Su;J. B. Kuo;D. Chen;C. S. Yeh; J. S. Su; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Modeling the Floating-Body-Effect-Induced Drain Current Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach	J. S. Su;J. B. Kuo;D. Chen;C. S. Yeh; J. S. Su; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Low-Voltage SOI CMOS DTMOS/MTCMOS Circuit Technique for Design Optimization of Low-power SOC Applications	W.C.H. Lin;J. B. Kuo; W.C.H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Low-Voltage SOI CMOS DTMOS/MTCMOS Circuit Technique for Design Optimization of Low-power SOC Applications	W.C.H. Lin;J. B. Kuo; W.C.H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect	C. H. Chen;J. B. Kuo;D. Chen;C. S. Yeh; C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Modeling the parasitic bipolar device in the 40nm PD SOI NMOS device considering the floating body effect	C. H. Chen;J. B. Kuo;D. Chen;C. S. Yeh; C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Charge Pumping Behavior of STI-Isolated PD SOI NMOS Device Operating at Low Temp	C. F. Yen;J. B. Kuo; C. F. Yen; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Charge Pumping Behavior of STI-Isolated PD SOI NMOS Device Operating at Low Temp	C. F. Yen;J. B. Kuo; C. F. Yen; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:05Z	Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device	H. J. Hung;J. B. kuo;D. Chen;C. T. Tsai;C. S. Yeh; H. J. Hung; J. B. kuo; D. Chen; C. T. Tsai; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:05Z	Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device	H. J. Hung;J. B. kuo;D. Chen;C. T. Tsai;C. S. Yeh; H. J. Hung; J. B. kuo; D. Chen; C. T. Tsai; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:38Z	Compact Modelign of Nanometer SOI CMOS Devices Considering Shallow Trench Isolation	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:38Z	Compact Modelign of Nanometer SOI CMOS Devices Considering Shallow Trench Isolation	J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:38Z	Floating-Body-Effect-Related Gate Tunneling Leakage Current Phenomenon of 40nm PD SOI NMOS Device	H. J. Hung;J. B. Kuo;C. T. Tsai;D. Chen; H. J. Hung; J. B. Kuo; C. T. Tsai; D. Chen; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:38Z	Floating-Body-Effect-Related Gate Tunneling Leakage Current Phenomenon of 40nm PD SOI NMOS Device	H. J. Hung;J. B. Kuo;C. T. Tsai;D. Chen; H. J. Hung; J. B. Kuo; C. T. Tsai; D. Chen; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:38Z	Low-Voltage CMOS VLSI Circuits	J. B. Kuo; J. H. Lou; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device	J. I. Lu;H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai; J. I. Lu; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device	J. I. Lu;H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai; J. I. Lu; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; JAMES-B KUO

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