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Showing items 106-115 of 176  (18 Page(s) Totally)
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Institution Date Title Author
臺大學術典藏 2018-09-10T07:08:19Z STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device H. J. Hung;J. I. Lu;J. B. Kuo;G. S. Lin;C. S. Yeh;C. T. Tsai;M. Ma; H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:19Z STI Mechanical-Stress Induced Small-Geometry Effect on Hysteresis Phenomenon of 40nm PD SOI NMOS Device H. J. Hung;J. I. Lu;J. B. Kuo;G. S. Lin;C. S. Yeh;C. T. Tsai;M. Ma; H. J. Hung; J. I. Lu; J. B. Kuo; G. S. Lin; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:19Z Compact Modeling of Sub-90nm CMOS VLSI Devices Considering Fringing Electric Field Effects J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:19Z Compact Modeling of Sub-90nm CMOS VLSI Devices Considering Fringing Electric Field Effects J. B. Kuo; J. B. Kuo; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:19Z CMOS VLSI Engineering: Silicon-on-Insulator (SOI) J. B. Kuo; K. W. Su; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:18Z Gate-Level Dual-Threshold Static Power Optimization Methodology (GDSPOM) Using Path-Based Static Timing Analysis (STA) Technique for SOC Application JAMES-B KUO; B. Chung; J. B. Kuo
臺大學術典藏 2018-09-10T07:08:18Z Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:18Z Breakdown Behavior of 40-nm PD-SOI NMOS Device Considering STI-Induced Mechanical Stress Effect I. S. Lin;V. C. Su;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:18Z Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device I. S. Lin;V. C. Su;J. B. Kuo;R. Lee;G. S. Lin;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO
臺大學術典藏 2018-09-10T07:08:18Z Shallow-trench-isolation (STI)-induced mechanical-stress-related kink-effect behaviors of 40-nm PD SOI NMOS device I. S. Lin;V. C. Su;J. B. Kuo;R. Lee;G. S. Lin;D. Chen;C. S. Yeh;C. T. Tsai;M. Ma; I. S. Lin; V. C. Su; J. B. Kuo; R. Lee; G. S. Lin; D. Chen; C. S. Yeh; C. T. Tsai; M. Ma; JAMES-B KUO

Showing items 106-115 of 176  (18 Page(s) Totally)
<< < 6 7 8 9 10 11 12 13 14 15 > >>
View [10|25|50] records per page

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